Christophe Gaquière
Orcid: 0000-0003-3082-2489
According to our database1,
Christophe Gaquière
authored at least 21 papers
between 2003 and 2023.
Collaborative distances:
Collaborative distances:
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Bibliography
2023
Sensors, September, 2023
2022
Temperature compensated power detector towards power consumption optimization in 5G devices.
Microelectron. J., 2022
2021
IEEE Trans. Circuits Syst. I Regul. Pap., 2021
Design of zero bias power detectors towards power consumption optimization in 5G devices.
Microelectron. J., 2021
Proceedings of the 19th IEEE International New Circuits and Systems Conference, 2021
2020
Temperature Dependence of the Taylor Series Coefficients and Intermodulation Distortion Characteristics of GaN HEMT.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2020
Extraction of nonlinear Taylor series coefficients for GaN HEMT over multi-bias condition.
Microelectron. J., 2020
CoRR, 2020
Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA.
CoRR, 2020
mm-Wave Through-Load Switch for in-situ Vector Network Analyzer on a 55-nm BiCMOS Technology.
Proceedings of the 18th IEEE International New Circuits and Systems Conference, 2020
2018
450 GHz f<sub>T</sub> SiGe: C HBT Featuring an Implanted Collector in a 55-nm CMOS Node.
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018
2015
Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs.
Microelectron. Reliab., 2015
2014
Proceedings of the IEEE 12th International New Circuits and Systems Conference, 2014
2012
IEEE Trans. Circuits Syst. II Express Briefs, 2012
Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence.
Microelectron. Reliab., 2012
2011
Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy.
Microelectron. Reliab., 2011
2009
Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate.
Microelectron. J., 2009
2006
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates.
Microelectron. J., 2006
2004
Microelectron. Reliab., 2004
2003
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates.
Microelectron. Reliab., 2003