Nicolas Baboux

According to our database, Nicolas Baboux authored at least 7 papers between 2004 and 2009.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2009

Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator.

Aimen Boubaker, M. Troudi, Nabil Sghaier, A. Souifi, Nicolas Baboux, A. Kalboussi

Microelectron. J., 2009

Discussion on the performances of hybrid SET-MOSFET Voltage Controlled Oscillators.

Wei Xuan, Françis Calmon, Nicolas Baboux, Abdelkader Souifi

Proceedings of the 16th IEEE International Conference on Electronics, 2009

2007

Parameters extraction of hafnium based gate oxide capacitors.

T. Nguyen, C. Busseret, Liviu Militaru, A. Poncet, D. Aimé, Nicolas Baboux, Carole Plossu

Microelectron. Reliab., 2007

Peculiarities of electron tunnel injection to the drain of EEPROMs.

Nicolas Baboux, C. Busseret, Carole Plossu, Philippe Boivin

Microelectron. Reliab., 2007

A new SIMPLORER model for single-electron transistors.

Aimen Boubaker, Nabil Sghaier, M. Troudi, A. Kalboussi, Nicolas Baboux, A. Souifi

Microelectron. J., 2007

2005

Dynamic Fowler-Nordheim injection in EEPROM tunnel oxides at realistic time scales.

Nicolas Baboux, Carole Plossu, Philippe Boivin

Microelectron. Reliab., 2005

2004

A new structure to monitor electrical transients during programming of EEPROM memory cells.

Nicolas Baboux, Carole Plossu, Philippe Boivin

Microelectron. Reliab., 2004