Naotaka Kuroda

According to our database, Naotaka Kuroda authored at least 7 papers between 2007 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2026

All-Nonsegmented SiC MOSFET Model Based on VHDL-AMS for Fast and Accurate System-Level Simulation.

Naotaka Kuroda, Yohei Nakamura, Atsushi Yamaguchi, Ken Nakahara

IEEE Access, 2026

2024

Parasitic Transistor with Hole Injection Current Modeling of AlGaN/GaN Ridge HEMTs.

Hitoshi Aoki, Naotaka Kuroda, Atsushi Yamaguchi, Ken Nakahara

Proceedings of the International Conference on Electrical, 2024

2023

Biotinylated Quinone as a Chemiluminescence Sensor for Biotin-Avidin Interaction and Biotin Detection Application.

Fatema Kaladari, Mahmoud El-Maghrabey, Megumi Kawazato, Naoya Kishikawa, Naotaka Kuroda

Sensors, December, 2023

2021

Geometry Independent Hole Injection Current Model of GaN Ridge HEMTs.

Hitoshi Aoki, Hiroyuki Sakairi, Naotaka Kuroda, Atsushi Yamaguchi, Ken Nakahara

Proceedings of the 30th IEEE International Symposium on Industrial Electronics, 2021

2020

Influence of Device Parameter Variability on Current Sharing of Parallel-Connected SiC MOSFETs.

Yohei Nakamura, Naotaka Kuroda, Atsushi Yamaguchi, Ken Nakahara, Michihiro Shintani, Takashi Sato

Proceedings of the 29th IEEE Asian Test Symposium, 2020

2019

Switching Time Characterization and Modeling of AlN/GaN MIS-HEMTs.

Hitoshi Aoki, Hiroyuki Sakairi, Naotaka Kuroda, Kentaro Chikamatsu, Ken Nakahara

Proceedings of the IEEE International Conference on Industrial Technology, 2019

2007

High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations.

Akio Wakejima, Kohji Matsunaga, Yuji Ando, Tatsuo Nakayama, Yasuhiro Okamoto, Kazuki Ota, Naotaka Kuroda, Masahiro Tanomura, Hironobu Miyamoto

IEICE Trans. Electron., 2007