Nengxu Zhu

According to our database, Nengxu Zhu authored at least 8 papers between 2024 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2026

A D-Band 6-bit Bi-directional Variable Gain Phase Shifter With 1.3°/0.2 dB RMS Phase/Gain Errors in 40 nm Bulk CMOS for 6G Communications.

Lize Wang, Nengxu Zhu, Yibo Cui, Zhifu Hu, Meilin He, Keyuan Chen, Keping Wang, Kiat Seng Yeo, Kaixue Ma, Fanyi Meng

IEEE Trans. Circuits Syst. I Regul. Pap., April, 2026

Design of a Compact Wideband SPDT Switch With High Isolation for Sub-6 GHz Applications.

Nengxu Zhu, Yiting Zhang, Zenglong Zhao, Fanyi Meng

IEEE Trans. Circuits Syst. II Express Briefs, January, 2026

2025

A 19-to-45 GHz High-Efficiency Frequency Doubler Using Multi-Port Darlington Cell With Fundamental and Second-Harmonic Pole-Stagger in 55-nm CMOS.

Zhen Yang, Fanyi Meng, Bing Liu, Nengxu Zhu, Zenglong Zhao, Kaixue Ma

IEEE J. Solid State Circuits, October, 2025

Design and Analysis of a 22.6-to-73.9 GHz Low-Noise Amplifier for 5G NR FR2 and NR-U Multiband/Multistandard Communications.

Zenglong Zhao, Xianghui Chen, Fanyi Meng, Zhen Yang, Bing Liu, Nengxu Zhu, Keping Wang, Kaixue Ma, Kiat Seng Yeo

IEEE J. Solid State Circuits, September, 2025

A Novel Low-Loss CMOS Digital Step Attenuator for Low-Power Scalable Phased Array Systems.

Nengxu Zhu, Yiting Zhang, Fanyi Meng

IEEE Trans. Very Large Scale Integr. Syst., 2025

A 4.5-37 GHz ultra-wideband amplifier with asymmetric T-coil matching network in 0.18-μm SiGe BiCMOS technology.

Hao Jiang, Zenglong Zhao, Nengxu Zhu, Keping Wang, Fanyi Meng

Microelectron. J., 2025

Two 7-13-GHz GaAs-SiGe Four-Channel Beamforming Chiplets With/Without Metallic Interlayer Shields.

Nengxu Zhu, Yiting Zhang, Genyin Ma, Fanyi Meng

IEEE Solid State Circuits Lett., 2025

2024

A 185-to-240 GHz SiGe Power Amplifier Using Non-Zero Base-Impedances for Power Gain and Output Power Optimizations.

Xin Zhang, Nengxu Zhu, Fanyi Meng

IEEE J. Emerg. Sel. Topics Circuits Syst., March, 2024