Nirupam Hatui

Orcid: 0000-0002-8848-3312

According to our database1, Nirupam Hatui authored at least 5 papers between 2019 and 2025.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2025
A new S-parameter Deep Level Transient Spectroscopy (S-DLTS) Method: Development and Qualification.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

2023
Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz.
Proceedings of the Device Research Conference, 2023

2020
A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT.
Proceedings of the 2020 Device Research Conference, 2020

Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage.
Proceedings of the 2020 Device Research Conference, 2020

2019
Virtual-Source Modeling of N-polar GaN MISHEMTS.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019


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