Umesh K. Mishra

According to our database1, Umesh K. Mishra authored at least 14 papers between 2000 and 2022.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Article 
PhD thesis 
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Links

On csauthors.net:

Bibliography

2022
Short-Circuit Capability with GaN HEMTs : Invited.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT.
Proceedings of the 2020 Device Research Conference, 2020

Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage.
Proceedings of the 2020 Device Research Conference, 2020

2019
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs).
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction.
Proceedings of the Device Research Conference, 2019

Virtual-Source Modeling of N-polar GaN MISHEMTS.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2015
Commercialization and reliability of 600 V GaN power switches.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2011
1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH<sub>3</sub>-rich conditions.
Microelectron. Reliab., 2011

AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes.
Microelectron. Reliab., 2011

2008
GaN-Based RF Power Devices and Amplifiers.
Proc. IEEE, 2008

2006
Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy.
IEICE Trans. Electron., 2006

2002
AlGaN/GaN HEMTs-an overview of device operation and applications.
Proc. IEEE, 2002

2000
Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers.
IEEE J. Solid State Circuits, 2000


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