Nirupam Hatui

According to our database, Nirupam Hatui authored at least 3 papers between 2019 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT.

Pawana Shrestha, Matthew Guidry, Brian Romanczyk, Rohit R. Karnaty, Nirupam Hatui, Christian Wurm, Athith Krishna, Shubhra S. Pasayat, Stacia Keller, James F. Buckwalter, Umesh K. Mishra

Proceedings of the 2020 Device Research Conference, 2020

Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage.

Wenjian Liu, Islam Sayed, Brian Romanczyk, Nirupam Hatui, Jana Georgieva, Haoran Li, Stacia Keller, Umesh K. Mishra

Proceedings of the 2020 Device Research Conference, 2020

2019

Virtual-Source Modeling of N-polar GaN MISHEMTS.

Rohit R. Karnaty, Umesh K. Mishra, James F. Buckwalter, Matthew Guidry, Pawana Shrestha, Brian Romanczyk, Nirupam Hatui, Xun Zheng, Christian Wurm, Haoran Li, Stacia Keller

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019