P. T. Lai

According to our database1, P. T. Lai authored at least 7 papers between 1994 and 2014.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2014
A study on the electrical characteristics of InGaZnO thin-film transistor with HfLaO gate dielectric annealed in different gases.
Microelectron. Reliab., 2014

2012
Improved performance of GeON as charge storage layer in flash memory by optimal annealing.
Microelectron. Reliab., 2012

2006
Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection.
Microelectron. Reliab., 2006

2004
Conduction mechanisms in MOS gate dielectric films.
Microelectron. Reliab., 2004

2002
Ultra-shallow n<sup>+</sup>p junction formed by PH<sub>3</sub> and AsH<sub>3</sub> plasma immersion ion implantation.
Microelectron. Reliab., 2002

MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC.
Microelectron. Reliab., 2002

1994
A closed-form delay expression for digital BiCMOS circuits with high-injection effects.
IEEE J. Solid State Circuits, May, 1994


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