Qing Zhu

According to our database, Qing Zhu authored at least 7 papers between 2018 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure.

Can Gong, Minhan Mi, Yuwei Zhou, Pengfei Wang, Hanzhen Li, Xinyi Wen, Ting Meng, Sirui An, Xiang Du, Kai Cheng, Meng Zhang, Qing Zhu, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2025

2024

Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias.

Qing Zhu, Zhenni Wang, Yuxiang Wei, Ling Yang, Xiaoli Lu, Jiejie Zhu, Peng Zhong, Yimin Lei, Xiaohua Ma

Sci. China Inf. Sci., 2024

A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness.

Sirui An, Minhan Mi, Pengfei Wang, Sijia Liu, Qing Zhu, Meng Zhang, Zhihong Chen, Jielong Liu, Siyin Guo, Can Gong, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2024

2023

Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light.

Yilin Chen, Qing Zhu, Jiejie Zhu, Minhan Mi, Meng Zhang, Yuwei Zhou, Ziyue Zhao, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., February, 2023

2022

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method.

Siyu Liu, Xiaohua Ma, Jiejie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Yilin Chen, Qing Zhu, Ling Yang, Yue Hao

Sci. China Inf. Sci., 2022

2020

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature.

Qing Zhu, Xiaohua Ma, Bin Hou, Mei Wu, Jiejie Zhu, Ling Yang, Meng Zhang, Yue Hao

IEEE Access, 2020

2018

Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs.

Jiejie Zhu, Bin Hou, Lixiang Chen, Qing Zhu, Ling Yang, Xiaowei Zhou, Peng Zhang, Xiaohua Ma, Yue Hao

Proceedings of the IEEE International Reliability Physics Symposium, 2018