Qing Zhu

Orcid: 0000-0002-3929-7150

Affiliations:

Xidian University, School of Advanced Materials and Nanotechnology, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, Xi'an, China

According to our database¹, Qing Zhu authored at least 8 papers between 2018 and 2026.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of four.

Timeline

Legend:

Book In proceedings Article PhD thesis Dataset Other

Bibliography

2026

Stress modulation of 2DEG concentration in thin-barrier AlGaN/GaN HEMT on Si substrate via LPCVD SiN: Experiment and simulation.

[BibT_eX]

[DOI]

Microelectron. J., 2026

2025

High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2025

2024

Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2024

A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2024

2023

Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., February, 2023

2022

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2022

2020

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature.

[BibT_eX]

[DOI]

IEEE Access, 2020

2018

Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Qing Zhu

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Bibliography

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