R. Q. Lin

According to our database, R. Q. Lin authored at least 1 paper in 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

3-bits-per-cell 2T32CFE nvTCAM by Angstrom-laminated Ferroelectric Layers with 10¹¹ Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching.

E. R. Hsieh, Y. T. Tang, C. R. Liu, S. M. Wang, Y. L. Hsueh, R. Q. Lin, Y. X. Huang, Y. T. Chen

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023