Roman Boldyrjew-Mast

According to our database, Roman Boldyrjew-Mast authored at least 2 papers between 2020 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2025

Influence of the Gate Switching Instability Induced Threshold Voltage Drift on the Hard Switching Behavior of 1.2 kV SiC MOSFETs.

Roman Boldyrjew-Mast, Clemens Herrmann, Xing Liu, Xupeng Li, Thomas Basler

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2020

Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress.

Shanmuganathan Palanisamy, Josef Lutz, Roman Boldyrjew-Mast, Thomas Basler

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020