Thomas Basler

According to our database, Thomas Basler authored at least 7 papers between 2012 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

SiC MOSFET threshold voltage stability during power cycling testing and the impact on the result interpretation.

Christian Schwabe, Xing Liu, Tobias N. Wassermann, Paul Salmen, Thomas Basler

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2021

Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density.

Shanmuganathan Palanisamy, Thomas Basler, Josef Lutz, Cesare Künzel, Larissa Wehrhahn-Kilian, Rudolf Elpelt

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress.

Shanmuganathan Palanisamy, Josef Lutz, R. Boldyrjew-Mast, Thomas Basler

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2015

Ruggedness of 1200 V SiC MPS diodes.

Susanne Fichtner, Sophia Frankeser, Josef Lutz, Roland Rupp, Thomas Basler, Rolf Gerlach

Microelectron. Reliab., 2015

2014

Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept.

Thomas Basler, M. Pfaffenlehner, Hans Peter Felsl, Franz-Josef Niedernostheide, F. Pfirsch, Hans-Joachim Schulze, Roman Baburske, Josef Lutz

IET Circuits Devices Syst., 2014

2012

Mechanical analysis of press-pack IGBTs.

Tilo Poller, Thomas Basler, Magnar Hernes, Salvatore D'Arco, Josef Lutz

Microelectron. Reliab., 2012

Surge current capability of IGBTs.

Thomas Basler, Josef Lutz, Roland Jakob, Thomas Bruckner

Proceedings of the International Multi-Conference on Systems, Signals & Devices, 2012