Josef Lutz

According to our database, Josef Lutz authored at least 27 papers between 2003 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2021

Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density.

Shanmuganathan Palanisamy, Thomas Basler, Josef Lutz, Cesare Künzel, Larissa Wehrhahn-Kilian, Rudolf Elpelt

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress.

Shanmuganathan Palanisamy, Josef Lutz, R. Boldyrjew-Mast, Thomas Basler

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Specific aspects regarding evaluation of power cycling tests with SiC devices.

Martina Gerlach, Peter Seidel, Josef Lutz

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

Study on power cycling test with different control strategies.

Guang Zeng, F. Wenisch-Kober, Josef Lutz

Microelectron. Reliab., 2018

Reliability and reliability investigation of wide-bandgap power devices.

Josef Lutz, Jörg Franke

Microelectron. Reliab., 2018

Unified view on energy and electrical failure of the short-circuit operation of IGBTs.

Roman Baburske, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Riteshkumar Bhojani, J. Kowalsky, Josef Lutz

Microelectron. Reliab., 2018

2016

Improving the short circuit ruggedness of IGBTs.

Lukas Tinschert, Magnar Hernes, Josef Lutz

Microelectron. Reliab., 2016

Topologies for inverter like operation of power cycling tests.

Christian Herold, Peter Seidel, Josef Lutz, Reinhold Bayerer

Microelectron. Reliab., 2016

Requirements in power cycling for precise lifetime estimation.

Christian Herold, Jörg Franke, Riteshkumar Bhojani, Andre Schleicher, Josef Lutz

Microelectron. Reliab., 2016

Internal processes in power semiconductors at virtual junction temperature measurement.

Weinan Chen, Jörg Franke, Christian Herold, Riteshkumar Bhojani, Josef Lutz

Microelectron. Reliab., 2016

2015

Possible failure modes in Press-Pack IGBTs.

Lukas Tinschert, Atle Rygg Årdal, Tilo Poller, Marco Bohlländer, Magnar Hernes, Josef Lutz

Microelectron. Reliab., 2015

Ruggedness of 1200 V SiC MPS diodes.

Susanne Fichtner, Sophia Frankeser, Josef Lutz, Roland Rupp, Thomas Basler, Rolf Gerlach

Microelectron. Reliab., 2015

2014

Some aspects on ruggedness of SiC power devices.

Josef Lutz, Roman Baburske

Microelectron. Reliab., 2014

Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept.

Thomas Basler, M. Pfaffenlehner, Hans Peter Felsl, Franz-Josef Niedernostheide, F. Pfirsch, Hans-Joachim Schulze, Roman Baburske, Josef Lutz

IET Circuits Devices Syst., 2014

2013

Approach of a physically based lifetime model for solder layers in power modules.

P. Steinhorst, Tilo Poller, Josef Lutz

Microelectron. Reliab., 2013

Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs.

Tilo Poller, Salvatore D'Arco, Magnar Hernes, Atle Rygg Årdal, Josef Lutz

Microelectron. Reliab., 2013

2012

Mechanical analysis of press-pack IGBTs.

Tilo Poller, Thomas Basler, Magnar Hernes, Salvatore D'Arco, Josef Lutz

Microelectron. Reliab., 2012

Dynamic avalanche in bipolar power devices.

Josef Lutz, Roman Baburske

Microelectron. Reliab., 2012

A simplified algorithm for predicting power cycling lifetime in Direct Drive wind power systems.

Salvatore D'Arco, Tore Undeland, Marco Bohlländer, Josef Lutz

Proceedings of the International Multi-Conference on Systems, Signals & Devices, 2012

Surge current capability of IGBTs.

Thomas Basler, Josef Lutz, Roland Jakob, Thomas Bruckner

Proceedings of the International Multi-Conference on Systems, Signals & Devices, 2012

2011

Thermal impedance spectroscopy of power modules.

A. Hensler, D. Wingert, Christian Herold, Josef Lutz, M. Thoben

Microelectron. Reliab., 2011

2008

Ruggedness analysis of 3.3 kV high voltage diodes considering various buffer structures and edge terminations.

Birk Heinze, Josef Lutz, Hans Peter Felsl, Hans-Joachim Schulze

Microelectron. J., 2008

2007

Influence of parasitic inductances on transient current sharing in parallel connected synchronous rectifiers and Schottky-barrier diodes.

D. Polenov, Josef Lutz, Hartmut Pröbstle, Andreas Brösse

IET Circuits Devices Syst., 2007

Thyristors and IGBTs with integrated self-protection functions.

Franz-Josef Niedernostheide, Hans-Joachim Schulze, Hans Peter Felsl, Thomas Laska, Ulrich Kellner-Werdehausen, Josef Lutz

IET Circuits Devices Syst., 2007

2006

Compensation and doping effects in heavily helium-radiated silicon for power device applications.

Ralf Siemieniec, Hans-Joachim Schulze, Franz-Josef Niedernostheide, W. Südkamp, Josef Lutz

Microelectron. J., 2006

2004

Possibilities and limits of axial lifetime control by radiation induced centers in fast recovery diodes.

Ralf Siemieniec, Josef Lutz

Microelectron. J., 2004

2003

Dynamic avalanche and reliability of high voltage diodes.

Josef Lutz, Martin Domeij

Microelectron. Reliab., 2003