Ryan Lu

According to our database1, Ryan Lu authored at least 13 papers between 2018 and 2025.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2025
CoWoS Package Reliability Risk Assessment & Mitigation from Mechanical Perspectives.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

Well-Charging Damage to Capacitors Connected Between VDD and VSS in a Single Power Domain.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

Comprehensive Study of Non-Conducting Stress Characteristics in Ultra-Scaled FinFET.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

Characterization of Cu and SiCN Adhesion in BEOL Interconnections.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

Exploring AC Time-Dependent Dielectric Breakdown (TDDB) Through Frequency Noise Analysis.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

Refined High Resistance Baking Approaches for Optimal Interconnect Reliability.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

Electromigration Performance of Cu Bumps in Various Configurations.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024
Layout Guidelines against Charging Damage from the Well-Side Antennas in Separated Power Domains.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Reliability Challenges from 2.5D to 3DIC in Advanced Package Development.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Protection Schemes for Plasma Induced Damage from Well-Side Antennas.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2019
A Novel Constant E-Field Methodology for Intrinsic TDDB Lifetime Projection.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
Comprehensive device and product level reliability studies on advanced CMOS technologies featuring 7nm high-k metal gate FinFET transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

The physical mechanism investigation of off-state drain bias TDDB and its implication in advance HK/MG FinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018


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