S. Bontemps

According to our database, S. Bontemps authored at least 3 papers between 2006 and 2011.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2011

A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices.

S. Pietranico, Stéphane Lefebvre, S. Pommier, M. Berkani Bouaroudj, S. Bontemps

Microelectron. Reliab., 2011

2009

Characterisation of power modules ceramic substrates for reliability aspects.

S. Pietranico, S. Pommier, Stéphane Lefebvre, Zoubir Khatir, S. Bontemps

Microelectron. Reliab., 2009

2006

Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling.

Laurent Dupont, Zoubir Khatir, Stéphane Lefebvre, S. Bontemps

Microelectron. Reliab., 2006