Stéphane Lefebvre

According to our database, Stéphane Lefebvre authored at least 28 papers between 2004 and 2019.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2019

SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation.

F. Boige, Frédéric Richardeau, Stéphane Lefebvre, Marc Cousineau

Math. Comput. Simul., 2019

2018

Experimental investigation of the reliability of Printed Circuit Board (PCB)-embedded power dies with pressed contact made of metal foam.

Yoann Pascal, Denis Labrousse, Mickael Petit, Stéphane Lefebvre, François Costa

Microelectron. Reliab., 2018

Effect of short circuit aging on safe operating area of SiC MOSFET.

Tien Anh Nguyen, Stéphane Lefebvre, Stephane Azzopardi

Microelectron. Reliab., 2018

Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation.

F. Boige, Frédéric Richardeau, Stéphane Lefebvre, Jean-Marc Blaquière, G. Guibaud, A. Bourennane

Microelectron. Reliab., 2018

Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode.

Oriol Avino-Salvado, Hervé Morel, Cyril Buttay, Denis Labrousse, Stéphane Lefebvre

Microelectron. Reliab., 2018

2017

Mechanisms of power module source metal degradation during electro-thermal aging.

R. Ruffilli, Mounira Berkani, Philippe Dupuy, Stéphane Lefebvre, Y. Weber, Marc Legros

Microelectron. Reliab., 2017

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation.

F. Boige, Frédéric Richardeau, David Trémouilles, Stéphane Lefebvre, G. Guibaud

Microelectron. Reliab., 2017

2016

[131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors.

Matthieu Landel, Cyrille Gautier, Denis Labrousse, Stéphane Lefebvre

Microelectron. Reliab., 2016

2015

Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET.

Boubekeur Tala-Ighil, Jean-Lionel Trolet, Hamid Gualous, P. Mary, Stéphane Lefebvre

Microelectron. Reliab., 2015

In-depth investigation of metallization aging in power MOSFETs.

R. Ruffilli, Mounira Berkani, Philippe Dupuy, Stéphane Lefebvre, Y. Weber, Marc Legros

Microelectron. Reliab., 2015

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs.

Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickael Petit, Cyril Buttay, Hervé Morel

Microelectron. Reliab., 2015

2014

3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions.

Michele Riccio, Vincenzo d'Alessandro, Andrea Irace, Gilles Rostaing, Mounira Berkani, Stéphane Lefebvre, Philippe Dupuy

Microelectron. Reliab., 2014

2013

Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications.

Gilles Rostaing, Mounira Berkani, D. Mechouche, Denis Labrousse, Stéphane Lefebvre, Zoubir Khatir, Philippe Dupuy

Microelectron. Reliab., 2013

Robustness of 1.2 kV SiC MOSFET devices.

D. Othman, Stéphane Lefebvre, Mounira Berkani, Zoubir Khatir, Ali Ibrahim, A. Bouzourene

Microelectron. Reliab., 2013

2012

Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application.

D. Othman, M. Bouarroudj-Berkani, Stéphane Lefebvre, Ali Ibrahim, Zoubir Khatir, A. Bouzourene

Microelectron. Reliab., 2012

Application of thermoelectricity to IGBT for temperature regulation and energy harvesting.

Yi Tian, Dejan Vasic, Stéphane Lefebvre

Proceedings of the 21st IEEE International Symposium on Industrial Electronics, 2012

2011

Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling.

Vanessa Smet, François Forest, Jean-Jacques Huselstein, Frédéric Richardeau, Zoubir Khatir, Stéphane Lefebvre, Mounira Berkani

IEEE Trans. Ind. Electron., 2011

A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices.

S. Pietranico, Stéphane Lefebvre, S. Pommier, M. Berkani Bouaroudj, S. Bontemps

Microelectron. Reliab., 2011

Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition.

Amrane Oukaour, Boubekeur Tala-Ighil, Bertrand Pouderoux, M. Tounsi, M. Bouarroudj-Berkani, Stéphane Lefebvre, Bertrand Boudart

Microelectron. Reliab., 2011

Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique.

Tien Anh Nguyen, Pierre-Yves Joubert, Stéphane Lefebvre, G. Chaplier, Lionel Rousseau

Microelectron. Reliab., 2011

2010

Ageing of SiC JFET transistors under repetitive current limitation conditions.

M. Bouarroudj-Berkani, D. Othman, Stéphane Lefebvre, S. Moumen, Zoubir Khatir, T. Ben Sallah

Microelectron. Reliab., 2010

2009

Characterisation of power modules ceramic substrates for reliability aspects.

S. Pietranico, S. Pommier, Stéphane Lefebvre, Zoubir Khatir, S. Bontemps

Microelectron. Reliab., 2009

Estimation of SiC JFET temperature during short-circuit operations.

Mounira Berkani, Stéphane Lefebvre, Narjes Boughrara, Zoubir Khatir, Jean-Claude Faugières, Peter Friedrichs, Ali Haddouche

Microelectron. Reliab., 2009

2007

Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices.

Zoubir Khatir, Stéphane Lefebvre, F. Saint-Eve

Microelectron. Reliab., 2007

Failure modes on low voltage power MOSFETs under high temperature application.

Laurent Dupont, Stéphane Lefebvre, M. Bouaroudj, Zoubir Khatir, Jean-Claude Faugières

Microelectron. Reliab., 2007

Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions.

M. Bouarroudj, Zoubir Khatir, Jean-Pierre Ousten, F. Badel, Laurent Dupont, Stéphane Lefebvre

Microelectron. Reliab., 2007

2006

Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling.

Laurent Dupont, Zoubir Khatir, Stéphane Lefebvre, S. Bontemps

Microelectron. Reliab., 2006

2004

Boundary element analysis of thermal fatigue effects on high power IGBT modules.

Zoubir Khatir, Stéphane Lefebvre

Microelectron. Reliab., 2004