S. Siddiqui

According to our database, S. Siddiqui authored at least 3 papers between 1996 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

Hot Carrier Degradation and performance boost on Si Channel nFET Gate-All-Around Nanosheet Devices.

H. Zhou, M. Hasanuzzaman, S. D. Suk, S. Emans, S. Siddiqui, R. Robison, R. Vega, M. Wang, Yasir Sulehria, S. Mochizuki, C. Durfee, Oleg Gluschenkov, N. Fokas, G. Bajpai, E. Leobandung, R. Mo, R. Krishnan, K. Okada, H. Miki, L. Qin, C. Child, T. Standaert, K. Zhao, D. Sohn, Y. Fukuzaki, K. Tomida, D. Guo, H. Bu

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2015

NBTI in Si0.5Ge0.5 RMG gate stacks - Effect of high-k nitridation.

P. Srinivasan, J. Fronheiser, S. Siddiqui, A. Kerber, L. F. Edge, Richard G. Southwick, Eduard Cartier

Proceedings of the IEEE International Reliability Physics Symposium, 2015

1996

DB: Browsing Object-Oriented Databases over the Web.

Carlos A. Varela, D. Nekhayev, P. Chandrasekharan, C. Krishnan, V. Govindan, D. Modgil, S. Siddiqui, D. Lebedenko, Marianne Winslett

World Wide Web J., 1996