Richard G. Southwick

According to our database, Richard G. Southwick authored at least 11 papers between 2015 and 2021.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2021

TDDB Reliability in Gate-All-Around Nanosheet.

Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Tian Shen, Ernest Y. Wu, Richard G. Southwick, Jingyun Zhang, Veeraraghavan S. Basker, Dechao Guo

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs.

Nilotpal Choudhury, Tarun Samadder, Ravi Tiwari, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor.

Huimei Zhou, Miaomiao Wang, Jingyun Zhang, Koji Watanabe, Curtis Durfee, Shogo Mochizuki, Ruqiang Bao, Richard G. Southwick, Maruf Bhuiyan, Basker Veeraraghavan

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs.

Nilotpal Choudhury, Uma Sharma, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor.

Miaomiao Wang, Jingyun Zhang, Huimei Zhou, Richard G. Southwick, Robin Hsin Kuo Chao, Xin Miao, Veeraraghavan S. Basker, Tenko Yamashita, Dechao Guo, Gauri Karve, Huiming Bu, James H. Stathis

Proceedings of the IEEE International Reliability Physics Symposium, 2019

On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs.

Narendra Parihar, Uma Sharma, Richard G. Southwick, Miaomiao Wang, James H. Stathis, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Time Dependent Dielectric Breakdown of Cobalt and Ruthenium Interconnects at 36nm Pitch.

H. Huang, P. S. McLaughin, James J. Kelly, C.-C. Yang, Richard G. Southwick, M. Wang, Griselda Bonilla, Gauri Karve

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics.

Miaomiao Wang, Richard G. Southwick, Kangguo Cheng, James H. Stathis

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Hot carrier reliability in ultra-scaled sige channel p-FinFETs.

Miaomiao Wang, Xin Miao, James H. Stathis, Richard G. Southwick

Proceedings of the 12th IEEE International Conference on ASIC, 2017

Interface engineering of Si1-xGex gate stacks for high performance dual channel CMOS.

ChoongHyun Lee, Richard G. Southwick, Shogo Mochizuki, Paul Jamison, Ruqiang Bao, Rajan Pandey, Aniruddha Konar, Takashi Ando, Vijay Narayanan, Bala Haran, Hemanth Jagannathan

Proceedings of the 12th IEEE International Conference on ASIC, 2017

2015

NBTI in Si0.5Ge0.5 RMG gate stacks - Effect of high-k nitridation.

P. Srinivasan, J. Fronheiser, S. Siddiqui, A. Kerber, L. F. Edge, Richard G. Southwick, Eduard Cartier

Proceedings of the IEEE International Reliability Physics Symposium, 2015