Salvador Ivan Garduño

Orcid: 0000-0003-0101-6285

According to our database1, Salvador Ivan Garduño authored at least 1 paper in 2011.

Collaborative distances:
  • Dijkstra number2 of six.
  • Erdős number3 of five.

Timeline

Legend:

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Links

On csauthors.net:

Bibliography

2011
Gate leakage currents modeling for oxynitride gate dielectric in double gate MOSFETs.
Proceedings of the 8th International Conference on Electrical Engineering, 2011


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