Sangjin Hyun
According to our database1,
Sangjin Hyun
authored at least 2 papers
between 2024 and 2025.
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Bibliography
2025
Proceedings of the IEEE International Memory Workshop, 2025
2024
Highly manufacturable Self-Aigned Direct Backside Contact (SA-DBC) and Backside Gate Contact (BGC) for 3-dimensional Stacked FET at 48nm gate pitch.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024