Sangjin Hyun

According to our database1, Sangjin Hyun authored at least 2 papers between 2024 and 2025.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

Legend:

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Links

On csauthors.net:

Bibliography

2025
Future Technology Outlook on DRAM/Flash Memories for More Moore and More Than Moore.
Proceedings of the IEEE International Memory Workshop, 2025

2024
Highly manufacturable Self-Aigned Direct Backside Contact (SA-DBC) and Backside Gate Contact (BGC) for 3-dimensional Stacked FET at 48nm gate pitch.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024


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