Daewon Ha

According to our database, Daewon Ha authored at least 26 papers between 2003 and 2026.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2026

Physics-informed AI Accelerated Retention Analysis of Ferroelectric Vertical NAND: From Day-Scale TCAD to Second-Scale Surrogate Model.

Gyujun Jeong, Sungwon Cho, Minji Shon, Namhoon Kim, Woohyun Hwang, Kwangyou Seo, Suhwan Lim, Wanki Kim, Daewon Ha, Prasanna Venkatesan Ravindran, Kihang Youn, Ram Cherukuri, Yiyi Wang, Suman Datta, Asif Islam Khan, Shimeng Yu

CoRR, March, 2026

A Novel Indium Gallium Zinc Oxide Channel-Based Electrochemical Field Effect Transistor for Physical Reservoir Computing.

Hyejin Kim, Jinho Byun, Junghoon Park, Kiheun Lee, Daewon Ha, Seyoung Kim

Adv. Intell. Syst., January, 2026

2025

FeNOMS: Enhancing Open Modification Spectral Library Search with In-Storage Processing on Ferroelectric NAND (FeNAND) Flash.

Sumukh Pinge, Ashkan Moradifirouzabadi, Keming Fan, Prasanna Venkatesan Ravindran, Tanvir H. Pantha, Po-Kai Hsu, Zheyu Li, Weihong Xu, Zihan Xia, Flavio Ponzina, Winston Chern, Taeyoung Song, Priyankka Gundlapudi Ravikumar, Mengkun Tian, Lance Fernandes, Huy Tran, Hari Jayasankar, Hang Chen, Chinsung Park, Amrit Garlapati, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Duygu Kuzum, Shimeng Yu, Sourav Dutta, Asif Islam Khan, Tajana Rosing, Mingu Kang

CoRR, October, 2025

An In-Situ Spatial-Temporal Sequence Detector for Neuromorphic Vision Sensor Empowered by High Density Vertical NAND Storage.

Zijian Zhao, Varun Darshana Parekh, Po-Kai Hsu, Yixin Qin, Yiming Song, A. N. M. Nafiul Islam, Ningyuan Cao, Siddharth Joshi, Thomas Kämpfe, Moonyoung Jung, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Sourav Dutta, Abhronil Sengupta, Xiao Gong, Shimeng Yu, Vijaykrishnan Narayanan, Kai Ni

CoRR, March, 2025

Modeling Dynamic Interplay Between Charge Traps and Polarization for Memory Window Enhancement in Gate Injection Layers.

Minji Shon, Chinsung Park, Prasanna Venkatesan Ravindran, Lance Fernandes, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Suman Datta, Asif Khan, Shimeng Yu

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention.

Prasanna Venkatesan Ravindran, Andrea Padovani, Lance Fernandes, Priyankka Gundlapudi Ravikumar, Chinsung Park, Huy Tran, Zekai Wang, Hari Jayasankar, Amrit Garlapati, Taeyoung Song, Hang Chen, Winston Chern, Zheng Wang, Kijoon Kim, Jongho Woog, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Luca Larcher, Gaurav Thareja, Asif Khan

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage.

Yixin Qin, Saikat Chakraborty, Zijian Zhao, Sizhe Ma, Moonyoung Jung, Kijoon Kim, Suhwan Lim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Jaydeep P. Kulkarni, Kai Ni

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Investigating Read-After-Write Delay in Ferroelectric FET with Gate-Side Injection.

Sizhe Ma, Saikat Chakraborty, Yixin Qin, Zijian Zhao, Jiahui Duan, Moonyoung Jung, Kijoon Kim, Suhwan Lim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Jaydeep P. Kulkarni, Kai Ni

Proceedings of the IEEE International Reliability Physics Symposium, 2025

The Opportunity of Anti-ferroelectrics in FeFET for Emerging Non-Volatile Memory Applications.

Hyojun Choi, Giuk Kim, Hunbeom Shin, Yunseok Nam, Sanghun Jeon, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Comparative Study of Channel Materials for Ferroelectric NAND Applications.

Lance Fernandes, Prasanna Venkatesan Ravindran, Mengkun Tian, Yu-Hsin Kuo, Nashrah Afroze, Salma Soliman, Sanghyun Kang, Dyutimoy Chakraborty, Taeyoung Song, Chengyang Zhang, Kijoon Kim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Asif Khan

Proceedings of the IEEE International Memory Workshop, 2025

Future Technology Outlook on DRAM/Flash Memories for More Moore and More Than Moore.

Su-Jin Ahn, Young Guen Song, Dongguk Cho, Daewon Ha, Wanki Kim, Kwangmin Park, Kwangjin Moon, Jin-Woo Han, Seon Il Shim, Sangjin Hyun, Jaihyuk Song

Proceedings of the IEEE International Memory Workshop, 2025

FeNOMS: Enhancing Open Modification Spectral Library Search with In-Storage Processing on Ferroelectric NAND (FeNAND) Flash.

Sumukh Pinge, Ashkan Moradifirouzabadi, Keming Fan, Prasanna Venkatesan Ravindran, Tanvir H. Pantha, Po-Kai Hsu, Zheyu Li, Weihong Xu, Zihan Xia, Flavio Ponzina, Winston Chern, Taeyoung Song, Priyankka Gundlapudi Ravikumar, Mengkun Tian, Lance Fernandes, Huy Tran, Hari Jayasankar, Hang Chen, Chinsung Park, Amrit Garlapati, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Duygu Kuzum, Shimeng Yu, Sourav Dutta, Asif Khan, Tajana Rosing, Mingu Kang

Proceedings of the IEEE/ACM International Conference On Computer Aided Design, 2025

2024

Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate.

Zijian Zhao, Sola Woo, Khandker Akif Aabrar, Sharadindu Gopal Kirtania, Zhouhang Jiang, Shan Deng, Yi Xiao, Halid Mulaosmanovic, Stefan Dünkel, Dominik Kleimaier, Steven Soss, Sven Beyer, Rajiv V. Joshi, Scott Meninger, Mohamed Mohamed, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Suman Datta, Shimeng Yu, Kai Ni

CoRR, 2024

Highly manufacturable Self-Aigned Direct Backside Contact (SA-DBC) and Backside Gate Contact (BGC) for 3-dimensional Stacked FET at 48nm gate pitch.

Jaehyun Park, Juhun Park, Kyuman Hwang, Jinchan Yun, Dahye Kim, Sungil Park, Jejune Park, Jinwook Yang, Jae Won Jeong, Chuljin Yun, Jinho Bae, Sam Park, Daihong Huh, Sanghyeon Kim, Seungeun Baek, Suk Yang, Inhae Zoh, Junghan Lee, Tae-sun Kim, Younsu Ha, Sun-Jung Lee, Sang Wuk Park, Bong Jin Kuh, Daewon Ha, Sangjin Hyun, Sujin Ahn, Jaihyuk Song

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Highly Robust All-Oxide Transistors with Ultrathin In2O3 as Channel and Thick In2O3 as Metal Gate Towards Vertical Logic and Memory.

Z. Lin, Z. Zhang, C. Niu, Hongyi Dou, Ke Xu, M. Islam, J.-Y. Lin, C. Sung, M. Hong, Daewon Ha, H. Wang, M. A. Alam, P. D. Ye

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Ge(110) GAA Nanosheet / Si(100) Tri-gate Nanosheet Monolithic CFETs Featuring Record-High Hole Mobility.

Seong Kwang Kim, Hyeongrak Lim, Jaeyong Jeong, Young-Keun Park, Jejune Park, Sungil Park, Jaehyun Park, Daewon Ha, Byung Jin Cho, Sanghyeon Kim

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling.

Giuk Kim, Hyojun Choi, Hunbeom Shin, Sangho Lee, Sangmok Lee, Yunseok Nam, Minhyun Jung, Ilho Myeong, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology.

Venkateswarlu Gaddam, Junghyeon Hwang, Hunbeom Shin, Chaeheon Kim, Giuk Kim, Hyung-Jun Kim, Jooho Lee, Hyun-Cheol Kim, Bumsu Park, Suhwan Lim, Sang Yun Kim, Kwangsoo Kim, Sungho Lee, Daewon Ha, Jinho Ahn, Sanghun Jeon

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND.

Ilho Myeong, Suhwan Lim, Taeyoung Kim, Sanghyun Park, Suseong Noh, Seung Min Lee, Jongho Woo, Hanseung Ko, Youngji Noh, Munkang Choi, Kiheun Lee, Sangwoo Han, Jongyeon Baek, Kijoon Kim, Dongjin Jung, Jisung Kim, Jaewoo Park, Seunghyun Kim, Hyoseok Kim, Ilyounz Yoon, Jaeho Kim, Kwangsoo Kim, Kwangmin Park, Bong Jin Kuh, Wanki Kim, Daewon Ha, Sujin Ahn, Jaihyuk Song, Sijung Yoo, Hyun Jae Lee, Duk-Hyun Choe, Seung-Geol Nam, Jinseong Heo

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Drain Current Degradation Induced by Charge Trapping/De-Trapping in Fe-FET.

Taeyoung Kim, Suhwan Lim, Ilho Myeong, Sanghyun Park, Suseong Noh, Seung Min Lee, Jongho Woo, Hanseung Ko, Youngji Noh, Moonkang Choi, Kiheun Lee, Sangwoo Han, Jongyeon Baek, Kijoon Kim, Dongjin Jung, Jisung Kim, Jaewoo Park, Seunghyun Kim, Hyoseok Kim, Sijung Yoo, Hyun Jae Lee, Duk-Hyun Choe, Seung-Geol Nam, Ilyoung Yoon, Chaeho Kim, Kwanzsoo Kim, Kwanzmin Park, Bong Jin Kuh, Jinseong Heo, Wanki Kim, Daewon Ha, Jaihyuk Song

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Exploring Innovative IGZO-channel based DRAM Cell Architectures and Key Technologies for Sub-10nm Node.

Daewon Ha, Y. Lee, Shinjae Yoo, W. Lee, M. H. Cho, K. Yoo, S. M. Lee, S. Lee, M. Terai, T. H. Lee, J. H. Bae, K. J. Moon, C. Sung, M. Hong, D. G. Cho, Kyunghwan Lee, S. W. Park, K. Park, Bong Jin Kuh, S. Hyun, Sujin Ahn, J. H. Song

Proceedings of the IEEE International Memory Workshop, 2024

Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation.

Dipjyoti Das, Lance Fernandes, Prasanna Venkatesan Ravindran, Taeyoung Song, Chinsung Park, Nashrah Afroze, Mengkun Tian, Hang Chen, Winston Chem, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Asif Islam Khan

Proceedings of the IEEE International Memory Workshop, 2024

2023

Improvement of GIDL-assisted Erase by using Surrounded BL PAD Structure for VNAND.

Suhwan Lim, Samki Kim, Changhee Lee, Hyeongwon Choi, Nambin Kim, Jaehun Jung, Hanvit Yang, Tae-Hun Kim, Junhee Lim, Daewon Ha, Sunghoi Hur, Jae-hoon Jang, Yu-Gyun Shin, Jaihyuk Song

Proceedings of the IEEE International Memory Workshop, 2023

2022

Prospective Innovation of DRAM, Flash, and Logic Technologies for Digital Transformation (DX) Era.

Daewon Ha, Hyoung-Sub Kim

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2017

12.2 A 7nm FinFET SRAM macro using EUV lithography for peripheral repair analysis.

Taejoong Song, Hoonki Kim, Woojin Rim, Yongho Kim, Sunghyun Park, Changnam Park, Minsun Hong, Giyong Yang, Jeongho Do, Jinyoung Lim, Seungyoung Lee, Ingyum Kim, Sanghoon Baek, Jonghoon Jung, Daewon Ha, Hyungsoon Jang, Taejung Lee, Chul-Hong Park, Bongjae Kwon, Hyuntaek Jung, Sungwee Cho, Yongjae Choo, Jaeseung Choi

Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

2003

Extremely scaled silicon nano-CMOS devices.

Leland Chang, Yang-Kyu Choi, Daewon Ha, Pushkar Ranade, Shiying Xiong, Jeffrey Bokor, Chenming Hu, Tsu-Jae King

Proc. IEEE, 2003