Sechung Oh

According to our database, Sechung Oh authored at least 2 papers between 2021 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Highly Scalable Vertical Bypass RRAM (VB-RRAM) for 3D V -NAND Memory.

Geonhui Han, Youngdong Kim, Jaeseon Kim, Dongmin Kim, Yoori Seo, Chuljun Lee, Jinmyung Choi, Jinwoo Lee, Dongho Ahn, Sechung Oh, Donghwa Lee, Hyunsang Hwang

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2021

Reliability of STT-MRAM for various embedded applications.

Shinhee Han, Junghyuk Lee, Kiseok Suh, Kyungtae Nam, Daeeun Jeong, Sechung Oh, Sohee Hwang, Yongsung Ji, Kilho Lee, Kangho Lee, Yoonjong Song, Yeongki Hong, Gitae Jeong

Proceedings of the IEEE International Reliability Physics Symposium, 2021