Shigeru Kishimoto

According to our database, Shigeru Kishimoto authored at least 6 papers between 2005 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2012

Improvement of the Interface Quality of the Al₂O₃/_III-Nitride Interface by (NH₄)₂S Surface Treatment for AlGaN/GaN MOSHFETs.

Eiji Miyazaki, Shigeru Kishimoto, Takashi Mizutani

IEICE Trans. Electron., 2012

2008

Enhancement-Mode n-Channel GaN MOSFETs Using HfO₂ as a Gate Oxide.

Shun Sugiura, Shigeru Kishimoto, Takashi Mizutani, Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka

IEICE Trans. Electron., 2008

A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch.

Koichi Maezawa, Ikuo Soga, Shigeru Kishimoto, Takashi Mizutani, Kazuhiro Akamatsu

IEICE Trans. Electron., 2008

Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer.

Masafumi Ito, Shigeru Kishimoto, Fumihiko Nakamura, Takashi Mizutani

IEICE Trans. Electron., 2008

2006

Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation.

Youhei Ookawa, Shigeru Kishimoto, Koichi Maezawa, Takashi Mizutani

IEICE Trans. Electron., 2006

2005

Controlling high-frequency chaos in resonant tunneling chaos generator circuits.

Koichi Maezawa, Yoshihiro Komoto, Shigeru Kishimoto, Takashi Mizutani, Misao Takakusaki, Hirofumi Nakata

IEICE Electron. Express, 2005