Tetsuzo Ueda

According to our database, Tetsuzo Ueda authored at least 11 papers between 2007 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2019

Influence of Donor-Type Hole Traps Under P-GaN Gate in GaN-Based Gate Injection Transistor (GIT).

Kenichiro Tanaka, Masahiro Hikita, Tetsuzo Ueda

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis.

Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Matteo Borga, Gaudenzio Meneghesso, Enrico Zanoni, Y. Kinoshita, Kenichiro Tanaka, H. Ishida, Tetsuzo Ueda

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations.

Ayanori Ikoshi, Masahiro Toki, Hiroto Yamagiwa, Daijiro Arisawa, Masahiro Hikita, Kazuki Suzuki, Manabu Yanagihara, Yasuhiro Uemoto, Kenichiro Tanaka, Tetsuzo Ueda

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2016

Reliability of Diode-Integrated SiC Power MOSFET(DioMOS).

Osamu Kusumoto, Atsushi Ohoka, Nobuyuki Horikawa, Kohtaro Tanaka, Masahiko Niwayama, Masao Uchida, Yoshihiko Kanzawa, Kazuyuki Sawada, Tetsuzo Ueda

Microelectron. Reliab., 2016

A fully integrated GaN-based power IC including gate drivers for high-efficiency DC-DC Converters.

Shinji Ujita, Yusuke Kinoshita, Hidekazu Umeda, Tatsuo Morita, Kazuhiro Kaibara, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda

Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016

2015

Conducted noise of GaN Schottky barrier diode in a DC-DC converter.

Takaaki Ibuchi, Tsuyoshi Funaki, Shinji Ujita, Masahiro Ishida, Tetsuzo Ueda

IEICE Electron. Express, 2015

2012

K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W.

Noboru Negoro, Masayuki Kuroda, Tomohiro Murata, Masaaki Nishijima, Yoshiharu Anda, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka

IEICE Trans. Electron., 2012

A DC-isolated gate drive IC with drive-by-microwave technology for power switching devices.

Shuichi Nagai, Noboru Negoro, Takeshi Fukuda, Nobuyuki Otsuka, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda

Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012

2011

Current status on GaN-based RF-power devices.

Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda

Proceedings of the 37th European Solid-State Circuits Conference, 2011

2008

Enhancement-Mode n-Channel GaN MOSFETs Using HfO₂ as a Gate Oxide.

Shun Sugiura, Shigeru Kishimoto, Takashi Mizutani, Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka

IEICE Trans. Electron., 2008

2007

Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique.

Teruki Ishido, Hisayoshi Matsuo, Takuma Katayama, Tetsuzo Ueda, Kaoru Inoue, Daisuke Ueda

IEICE Electron. Express, 2007