Shigeto Fukatsu

According to our database, Shigeto Fukatsu authored at least 2 papers between 2012 and 2013.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2013

Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing.

Izumi Hirano, Yasushi Nakasaki, Shigeto Fukatsu, Masakazu Goto, Koji Nagatomo, Seiji Inumiya, Katsuyuki Sekine, Yuichiro Mitani, Kikuo Yamabe

Microelectron. Reliab., 2013

2012

Lifetime prediction of channel hot carrier degradation in pMOSFETs separating NBTI component.

Yuichiro Mitani, Shigeto Fukatsu, Daisuke Hagishima, Kazuya Matsuzawa

Proceedings of the IEEE International Conference on IC Design & Technology, 2012