Yasushi Nakasaki

According to our database1, Yasushi Nakasaki authored at least 6 papers between 2013 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Links

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Bibliography

2023
Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2020
Further Investigation on Mechanism of Trap Level Modulation in Silicon Nitride Films by Fluorine Incorporation.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018
Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Study on mechanism of thermal curing in ultra-thin gate dielectrics.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017
Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface.
Microelectron. Reliab., 2017

2013
Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing.
Microelectron. Reliab., 2013


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