Siegfried Mantl

According to our database, Siegfried Mantl authored at least 6 papers between 2012 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2017

Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM.

Gia Vinh Luong, Sebastiano Strangio, Andreas T. Tiedemann, Patric Bernardy, Stefan Trellenkamp, Pierpaolo Palestri, Siegfried Mantl, Qing-Tai Zhao

Proceedings of the 47th European Solid-State Device Research Conference, 2017

Ultrathin lateral unidirectional bipolar-type insulated-gate transistor as pH sensor.

Qinghua Han, Anran Gao, Keyvan Narimani, Yuelin Wang, Tie Li, Siegfried Mantl, Qing-Tai Zhao

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Si n-TFETs on ultra thin body with suppressed ambipolarity.

Chang Liu, Qinghua Han, Gia Vinh Luong, Keyvan Narimani, Stefan Glass, Andreas T. Tiedemann, Stefan Trellenkamp, Wenjie Yu, Xi Wang, Siegfried Mantl, Qing-Tai Zhao

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2014

Experimental demonstration of improved analog device performance in GAA-NW-TFETs.

Christian Schulte-Braucks, Simon Richter, Lars Knoll, Luca Selmi, Qing-Tai Zhao, Siegfried Mantl

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Low frequency noise in strained silicon nanowire array MOSFETs and Tunnel-FETs.

Simon Richter, Svetlana A. Vitusevich, Sergii Pud, Jing Li, Lars Knoll, Stefan Trellenkamp, Anna Schäfer, Steffi Lenk, Qing-Tai Zhao, Andreas Offenhäusser, Siegfried Mantl, Konstantin K. Bourdelle

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped Nisi2 tunnel junctions.

Lars Knoll, Qing-Tai Zhao, Stefan Trellenkamp, Anna Schäfer, K. K. Bourdelle, Siegfried Mantl

Proceedings of the 2012 European Solid-State Device Research Conference, 2012