Srimanta Baishya

Orcid: 0000-0001-8984-8806

According to our database1, Srimanta Baishya authored at least 15 papers between 2008 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

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PhD thesis 
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Links

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Bibliography

2023
Numerical assessment of dielectrically-modulated short- double-gate PNPN TFET-based label-free biosensor.
Microelectron. J., March, 2023

2022
A Comprehensive Survey of Emergency Communication Network and Management.
Wirel. Pers. Commun., 2022

Impact of interface trap charge and temperature on the performance of epitaxial layer tunnel field effect transistor.
Microelectron. J., 2022

Computationally efficient hybrid differential evolution with learning for engineering application.
Int. J. Bio Inspired Comput., 2022

2021
A hybrid memory-based dragonfly algorithm with differential evolution for engineering application.
Eng. Comput., 2021

Energy Efficient Optimal Resource Allocation in Multi-RAT Heterogeneous Network.
Appl. Artif. Intell., 2021

2020
Buyer Inspired Meta-Heuristic Optimization Algorithm.
Open Comput. Sci., 2020

2019
An Architectural Parametric Analysis for Vertical Super-Thin Body (VSTB) MOSFET with Double Material Gate (DMG).
Proceedings of the TENCON 2019, 2019

2018
Analytical model of surface potential and threshold voltage in gate-drain overlap FinFET.
Microelectron. J., 2018

Analysis of Spectrum Handoff under General Residual Time Distributions of Spectrum Holes in Cognitive Radio Networks.
J. Inf. Sci. Eng., 2018

2016
Effect of scaling on noise in Circular Gate TFET and its application as a digital inverter.
Microelectron. J., 2016

2015
A Comprehensive Analysis of Spectrum Handoff Under Different Distribution Models for Cognitive Radio Networks.
Wirel. Pers. Commun., 2015

2014
On the analog and radio frequency performance of Junctionless Single Metal Gate cylindrical surround gate metal-oxide-semiconductor field-effect transistors.
Simul., 2014

2013
A power efficient 6-bit TIQ ADC design for portable applications.
Proceedings of the IEEE Third International Conference on Consumer Electronics, 2013

2008
A threshold voltage model for short-channel MOSFETs taking into account the varying depth of channel depletion layers around the source and drain.
Microelectron. Reliab., 2008


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