Tamotsu Hashizume

According to our database, Tamotsu Hashizume authored at least 7 papers between 2006 and 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2014

13.56-MHz Class-E RF power amplifier using normally-on GaN HEMT.

Masayuki Okamoto, Toshihiko Tanaka, Koyo Matuzaki, Tamotsu Hashizume, Hiroaki Yamada

Proceedings of the IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society, Dallas, TX, USA, October 29, 2014

2012

Foreword.

Tamotsu Hashizume

IEICE Trans. Electron., 2012

2009

Multiple-Valued Logic Gates Using Asymmetric Single-Electron Transistors.

Wancheng Zhang, Nan-Jian Wu, Tamotsu Hashizume, Seiya Kasai

Proceedings of the ISMVL 2009, 2009

2008

Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures.

Hong-Quan Zhao, Seiya Kasai, Tamotsu Hashizume, Nan-Jian Wu

IEICE Trans. Electron., 2008

2007

Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier.

Abdul Manaf Hashim, Seiya Kasai, Kouichi Iizuka, Tamotsu Hashizume, Hideki Hasegawa

Microelectron. J., 2007

Integration of interdigital-gated plasma wave device for proximity communication system application.

Abdul Manaf Hashim, Seiya Kasai, Tamotsu Hashizume, Hideki Hasegawa

Microelectron. J., 2007

2006

Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress.

Hideki Hasegawa, Seiya Kasai, Taketomo Sato, Tamotsu Hashizume

IEICE Trans. Electron., 2006