Tsunenobu Kimoto

Affiliations:
  • Kyoto University, Kyoto, Japan


According to our database1, Tsunenobu Kimoto authored at least 12 papers between 2004 and 2022.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 2015, "For contributions to silicon carbide materials and devices".

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2022
Performance Improvement and Reliability Physics in SiC MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2020
Rapid Revolution Speed Control of the Brushless DC Motor for Automotive LIDAR Applications.
IEICE Trans. Electron., 2020

2014
Progress and future challenges of silicon carbide devices for integrated circuits.
Proceedings of the IEEE 2014 Custom Integrated Circuits Conference, 2014

2013
Ultrahigh-voltage SiC devices for future power infrastructure.
Proceedings of the European Solid-State Device Research Conference, 2013

2012
Thermal instability effects in SiC Power MOSFETs.
Microelectron. Reliab., 2012

2011
A study of SiC Power BJT performance and robustness.
Microelectron. Reliab., 2011

2008
A study on electro thermal response of SiC power module during high temperature operation.
IEICE Electron. Express, 2008

High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena.
IEICE Electron. Express, 2008

2007
Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET.
IEICE Electron. Express, 2007

2006
Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage.
IEICE Electron. Express, 2006

2005
Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters.
IEICE Electron. Express, 2005

2004
SiC JFET dc characteristics under extremely high ambient temperatures.
IEICE Electron. Express, 2004


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