W. J. Hsueh

According to our database, W. J. Hsueh authored at least 1 paper in 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2015

The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors.

Hsien-Chin Chiu, Wen-Yu Lin, W. J. Hsueh, Pei-Chin Chiu, Yue-Ming Hsin, Jen-Inn Chyi

Microelectron. Reliab., 2015