Hsien-Chin Chiu

Orcid: 0000-0003-1068-5798

According to our database1, Hsien-Chin Chiu authored at least 30 papers between 2006 and 2020.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2020
Electromagnetic Induced Failure in GaN-HEMT High-Frequency Power Amplifier.
IEEE Trans. Ind. Electron., 2020

2018
AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers.
Microelectron. Reliab., 2018

2017
Effect of body bias and temperature on low-frequency noise in 40-nm nMOSFETs.
Microelectron. Reliab., 2017

A high output power and low phase noise GaN HEMT VCO with array of switchable inductors.
Int. J. Circuit Theory Appl., 2017

2016
The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment.
Microelectron. Reliab., 2016

2015
N<sub>2</sub>O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO<sub>2</sub> High-k insulator.
Microelectron. Reliab., 2015

The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors.
Microelectron. Reliab., 2015

2014
Device characteristics of AlGaN/GaN MIS-HEMTs with high-k Hf<sub>x</sub>Zr<sub>1</sub><sub>-</sub><sub>x</sub>O<sub>2</sub> (x = 0.66, 0.47, 0.15) insulator layer.
Microelectron. Reliab., 2014

2013
Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design.
Microelectron. Reliab., 2013

Low frequency noise in field-plate multigate AlGaN/GaN single-pole-single-throw RF switches on silicon substrate.
Microelectron. Reliab., 2013

Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis.
Microelectron. Reliab., 2013

Design of an S-band 0.35 µm AlGaN/GaN LNA using cascode topology.
Proceedings of the 16th IEEE International Symposium on Design and Diagnostics of Electronic Circuits & Systems, 2013

2012
Investigation on the thermal behavior of 0.15 μm gate-length In<sub>0.4</sub>Al<sub>0.6</sub>As/In<sub>0.4</sub>Ga<sub>0.6</sub>As MHEMT.
Microelectron. Reliab., 2012

Characterization and reliability of nMOSFETs on flexible substrates under mechanical strain.
Microelectron. Reliab., 2012

Investigation of surface pretreatments on GaAs and memory characteristics of MOS capacitors embedded with Au nano-particles.
Microelectron. Reliab., 2012

A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate.
Microelectron. Reliab., 2012

Novel GaAs enhancement-mode/depletion-mode pHEMTs technology using high-k praseodymium oxide interlayer.
Microelectron. Reliab., 2012

High thermal stability and low hysteresis dispersion AlGaN/GaN MOS-HEMTs with zirconia film design.
Microelectron. Reliab., 2012

Ultra-Wideband Circuits, Systems, and Applications.
J. Electr. Comput. Eng., 2012

2011
High-k praseodymium oxide passivated AlGaN/GaN MOSFETs using P<sub>2</sub>S<sub>5</sub>/(NH<sub>4</sub>)<sub>2</sub>S<sub>X</sub> + UV interface treatment.
Microelectron. Reliab., 2011

Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs.
Microelectron. Reliab., 2011

High electrical performance liquid-phase HBr oxidation gate insulator of InAlAs/InGaAs metamorphic MOS-mHEMT.
Microelectron. Reliab., 2011

A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology.
Microelectron. Reliab., 2011

2010
Electromechanical controlled phased array dumbbell EBG beam steerer.
Microelectron. Reliab., 2010

High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using palladium-gate technology.
Microelectron. Reliab., 2010

Electrical and reliability characteristics of GaAs MOSHEMTs utilizing high-k IIIB and IVB oxide layers.
Microelectron. Reliab., 2010

2009
A novel complementary Colpitts differential CMOS VCO with low phase noise performance.
Microelectron. J., 2009

2008
Design of training-based mobile receivers for multiuser time-hopping UWB communication systems.
Proceedings of the 5th International Conference on Mobile Technology, 2008

2007
A Novel Power MOSFET Structure with Shallow Junction Dual Well Design.
IEICE Trans. Electron., 2007

2006
High Performance Power MOSFETs by Wing-Cell Structure Design.
IEICE Trans. Electron., 2006


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