Yue-Ming Hsin

According to our database, Yue-Ming Hsin authored at least 6 papers between 2005 and 2018.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2018

GaAsSb/InGaAs tunnel field effect transistor with a pocket layer.

Tzu-Yu Yu, Liang-Shuan Peng, Chun-Wei Lin, Yue-Ming Hsin

Microelectron. Reliab., 2018

2015

The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors.

Hsien-Chin Chiu, Wen-Yu Lin, W. J. Hsueh, Pei-Chin Chiu, Yue-Ming Hsin, Jen-Inn Chyi

Microelectron. Reliab., 2015

2014

A dual-gate 2nd/3rd-order subharmonic injection-locked oscillator in GaAs PHEMT.

Fan-Hsiu Huang, Yue-Ming Hsin

Microelectron. J., 2014

2013

A low-power differential injection-locked frequency divider with output power flatness in 0.5 μm E/D-mode GaAs PHEMT.

Fan-Hsiu Huang, Yue-Ming Hsin

Microelectron. J., 2013

2007

Simulation Study of a Novel Collector-up <i>npn</i> InGaP/GaAs Heterojunction Bipolar Transistor with a <i>p</i>-Type Doping Buried Layer for Current Confinement.

Hung-tsao Hsu, Yue-Ming Hsin

IEICE Trans. Electron., 2007

2005

Collector Doping Design for Improving DC and RF Performance in InGaP/GaAs HBTs before Onset of Kirk Effect.

Che-ming Wang, Kuang-Po Hsueh, Yue-Ming Hsin

IEICE Trans. Electron., 2005