Won-Ju Cho

According to our database, Won-Ju Cho authored at least 17 papers between 2007 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2024

Smart pH Sensing: A Self-Sensitivity Programmable Platform with Multi-Functional Charge-Trap-Flash ISFET Technology.

Yeong-Ung Kim, Won-Ju Cho

Sensors, February, 2024

2023

Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-k Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors.

Tae-Hwan Hyun, Won-Ju Cho

Sensors, August, 2023

2021

Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories.

Hyeong-Un Jeon, Won-Ju Cho

Sensors, 2021

Highly Sensitive and Transparent Urea-EnFET Based Point-of-Care Diagnostic Test Sensor with a Triple-Gate a-IGZO TFT.

Seong-Kun Cho, Won-Ju Cho

Sensors, 2021

Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor.

Seong-Kun Cho, Won-Ju Cho

Sensors, 2021

2018

Effects of the compositional ratios of sputtering target on the device performance and instability in amorphous InGaZnO thin film transistors.

Hee Pyung Park, Sang Woo Kim, Joong-Won Shin, Won-Ju Cho, Jong Tae Park

Microelectron. Reliab., 2018

Effect of microwave annealing on SOI MOSFETs: Post-metal annealing with low thermal budget.

Eun-Ki Hong, Won-Ju Cho

Microelectron. Reliab., 2018

2017

Reliability of amorphous InGaZnO TFTs with ITO local conducting buried layer for BEOL power transistors.

Hyun Jong Kim, Byung Sang Song, Won-Ju Cho, Jong Tae Park

Microelectron. Reliab., 2017

Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with ITO local conducting buried layer.

Sang Min Kim, Min-Soo Kang, Won-Ju Cho, Jong Tae Park

Microelectron. Reliab., 2017

2016

Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with transparent source and drain.

Jong Hoon Lee, Seul Ki Yu, Jae Won Kim, Min-Ju Ahn, Won-Ju Cho, Jong Tae Park

Microelectron. Reliab., 2016

Device instability of amorphous InGaZnO thin film transistors with transparent source and drain.

Sang Min Kim, Min-Ju Ahn, Won-Ju Cho, Jong Tae Park

Microelectron. Reliab., 2016

2012

Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs.

Seung Min Lee, Chong-Gun Yu, Seung Min Jeong, Won-Ju Cho, Jong Tae Park

Microelectron. Reliab., 2012

Comparative study of electrical instabilities in InGaZnO thin film transistors with gate dielectrics.

Seul Ki Lee, Sung Il Hong, Yeon Ho Lee, Se Won Lee, Won-Ju Cho, Jong Tae Park

Microelectron. Reliab., 2012

2010

NBTI and hot carrier effect of Schottky-barrier p-MOSFETs.

Jin-Young Kim, Jun-Seok Oh, Won-Ju Cho, Jong Tae Park

Microelectron. Reliab., 2010

2009

NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer.

Yong Woo Jeon, Dae Hyun Ka, Chong-Gun Yu, Won-Ju Cho, M. Saif Islam, Jong Tae Park

Microelectron. Reliab., 2009

2008

Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In₂O₃ Nano-Particles Embedded in Polyimide Insulator.

Dong-Uk Lee, Seon Pil Kim, Tae Hee Lee, Eun Kyu Kim, Hyun-Mo Koo, Won-Ju Cho, Young-Ho Kim

IEICE Trans. Electron., 2008

2007

Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs.

Sung Jun Jang, Dae Hyun Ka, Chong-Gun Yu, Kwan-Su Kim, Won-Ju Cho, Jong Tae Park

Microelectron. Reliab., 2007