Xuepeng Zhan

Orcid: 0000-0002-1701-9301

According to our database1, Xuepeng Zhan authored at least 18 papers between 2020 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2024
Operation Scheme Optimizations to Achieve Ultra-high Endurance (1010) in Flash Memory with Robust Reliabilities.
CoRR, 2024

2023
Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editing.
Sci. China Inf. Sci., December, 2023

High-Precision Short-Term Lifetime Prediction in TLC 3-D NAND Flash Memory as Hot-Data Storage.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., October, 2023

Dual-pulse disturb-free programming scheme for FeFET based neuromorphic computing.
Microelectron. J., 2023

Error Bits Recovering in 3D NAND Flash Memory: A Novel State-Shift Re-Program (SRP) Scheme.
Proceedings of the IEEE International Conference on Integrated Circuits, 2023

Opto-Electronic Monolayer ZnO Memristor Produced via Low Temperature Atomic Layer Deposition.
Proceedings of the IEEE International Conference on Integrated Circuits, 2023

Simulation for the Feasibility of IGZO Channel in 3D Vertical FeFET Memory Based on TCAD.
Proceedings of the IEEE International Conference on Integrated Circuits, 2023

One-shot Read Processing to Enhance Cold Data Retention in Charge-trap TLC 3D NAND Flash.
Proceedings of the 15th IEEE International Conference on ASIC, 2023

Flash-based Computing-in-memory Architectures with High-accuracy and Robust Reliabilities for General-purpose Applications.
Proceedings of the 15th IEEE International Conference on ASIC, 2023

2022
Optimal Program-Read Schemes Toward Highly Reliable Open Block Operations in 3-D Charge-Trap NAND Flash Memory.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2022

Voltage and temperature dependence of Random Telegraph Noise and their impacts on random number generator.
Microelectron. J., 2022

Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors.
Sci. China Inf. Sci., 2022

Large Suppression to Lateral Charge Migration (LCM) Related Error Bits in Charge-Trap TLC 3D NAND Flash.
Proceedings of the 2022 IEEE International Conference on Integrated Circuits, 2022

Work-in-Progress: High-Precision Short-Term Lifetime Prediction in TLC 3D NAND Flash Memory as Hot-data Storage.
Proceedings of the International Conference on Compilers, 2022

2021
Flash memory based computing-in-memory system to solve partial differential equations.
Sci. China Inf. Sci., 2021

Bits Mapping in Triple-level-cell (TLC) Charge-trap (CT) 3D NAND Flash Memory and its Applications to IoT Security.
Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021

2020
Retention Correlated Read Disturb Errors in 3-D Charge Trap NAND Flash Memory: Observations, Analysis, and Solutions.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2020

Dual-Point Technique for Multi-Trap RTN Signal Extraction.
IEEE Access, 2020


  Loading...