Yan He
Orcid: 0000-0002-1260-4536Affiliations:
- Rice University, Department of Electrical and Computer Engineering, Houston, TX, USA
According to our database1,
Yan He
authored at least 13 papers
between 2020 and 2024.
Collaborative distances:
Collaborative distances:
Timeline
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on orcid.org
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Bibliography
2024
16.5 A Synthesizable Design-Agnostic Timing Fault Injection Monitor Covering 2MHz to 1.26GHz Clocks in 65nm CMOS.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
ASCH-PUF: A "Zero" Bit Error Rate CMOS Physically Unclonable Function With Dual-Mode Low-Cost Stabilization.
IEEE J. Solid State Circuits, 2023
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
2022
Magnetoelectric Bio-Implants Powered and Programmed by a Single Transmitter for Coordinated Multisite Stimulation.
IEEE J. Solid State Circuits, 2022
Proceedings of the IEEE Custom Integrated Circuits Conference, 2022
2021
CAP-RAM: A Charge-Domain In-Memory Computing 6T-SRAM for Accurate and Precision-Programmable CNN Inference.
IEEE J. Solid State Circuits, 2021
Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021
12.3 Exploring PUF-Controlled PA Spectral Regrowth for Physical-Layer Identification of IoT Nodes.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
36.5 An Automatic Self-Checking and Healing Physically Unclonable Function (PUF) with <3 × 10⁻⁸ Bit Error Rate.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
Multisite bio-stimulating implants magnetoelectrically powered and individually programmed by a single transmitter.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2021
2020
MagNI: A Magnetoelectrically Powered and Controlled Wireless Neurostimulating Implant.
IEEE Trans. Biomed. Circuits Syst., 2020
34.3 An 8.2mm<sup>3</sup> Implantable Neurostimulator with Magnetoelectric Power and Data Transfer.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
25.3 A 65nm Edge-Chasing Quantizer-Based Digital LDO Featuring 4.58ps-FoM and Side-Channel-Attack Resistance.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020