Yannan Yang

According to our database, Yannan Yang authored at least 2 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

O₂ Plasma Alternately Treated ALD-Al₂O₃ as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs.

Qiang Wang, Maolin Pan, Penghao Zhang, Luyu Wang, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Min Xu

IEEE Access, 2024

2022

A high-speed low side GaN e-HEMT driver with gate ringing and overshoot suppression.

Jian Jin, Mengyuan Sun, Yannan Yang, Min Xu, David Wei Zhang

IEICE Electron. Express, 2022