Yutao Cai

Orcid: 0000-0002-2151-9325

According to our database1, Yutao Cai authored at least 6 papers between 2019 and 2022.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2022
Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3 charge trapping layer.
Proceedings of the International Conference on IC Design and Technology, 2022

2021
Threshold Voltage Instability in D-mode AlGaN/GaN MIS-HEMTs with Al2O3 Gate Dielectric.
Proceedings of the International Conference on IC Design and Technology, 2021

2020
Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices.
IEEE Access, 2020

2019
The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters.
Proceedings of the International Conference on IC Design and Technology, 2019

Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices.
Proceedings of the International Conference on IC Design and Technology, 2019

Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode With and Without Recessed Anode.
Proceedings of the International Conference on IC Design and Technology, 2019


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