Wen Liu

According to our database, Wen Liu authored at least 18 papers between 2019 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Physics-Based Small-Signal Model of Ga2O3 Hot-Electron Transistor.

Roupu Zhu, Chengwei Liu, Yuhao Zhu, Wen Liu, Yi Pei, Man Hoi Wong

Proceedings of the International Conference on IC Design and Technology, 2023

The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTs.

Shiqiang Wu, Fan Li, Yuhao Zhu, Yixiao Huang, Chenruiyuan Yu, Yubo Wang, Xuan Chi, Huiqing Wen, Wen Liu

Proceedings of the International Conference on IC Design and Technology, 2023

Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level Shifters.

Junzhe Tan, Dongyi Yang, Shiqiang Wu, Yuhao Zhu, Yaoyao Pan, Pengju Cui, Wen Liu

Proceedings of the International Conference on IC Design and Technology, 2023

The Investigation of Source Field Plate on the Performance of pGaN Gate Device and Dual-Gate Bidirectional Switch using TCAD Simulation.

Xuan Chi, Yubo Wang, Fan Li, Yixiao Huang, Chenruiyuan Yu, Shiqiang Wu, Huiqing Wen, Jiangmin Gu, Ping Zhang, Wen Liu

Proceedings of the International Conference on IC Design and Technology, 2023

2022

Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3 charge trapping layer.

Jiachen Duan, Yuanlei Zhang, Ye Liang, Yutao Cai, Wen Liu

Proceedings of the International Conference on IC Design and Technology, 2022

2021

Monolithic DFF-NAND and DFF-NOR logic circuits based on GaN MIS-HEMT.

Yuhao Zhu, Miao Cui, Ang Li, Fan Li, Huiqing Wen, Wen Liu

Proceedings of the International Conference on IC Design and Technology, 2021

Threshold Voltage Instability in D-mode AlGaN/GaN MIS-HEMTs with Al2O3 Gate Dielectric.

Ye Liang, Yuanlei Zhang, Yutao Cai, Zhaoyi Wang, Yinchao Zhao, Huiqing Wen, Wen Liu

Proceedings of the International Conference on IC Design and Technology, 2021

Stability Analysis of Monolithic GaN MIS-HEMT Comparator with Device PBTI and Circuit Stress Tests.

Ang Li, Yi Shen, Ziqian Li, Yuhao Zhu, Huiqing Wen, Wen Liu

Proceedings of the 14th IEEE International Conference on ASIC, 2021

2020

Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices.

Yutao Cai, Yang Wang, Ye Liang, Yuanlei Zhang, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Cezhou Zhao

IEEE Access, 2020

2019

Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters.

Miao Cui, Ruize Sun, Qinglei Bu, Wen Liu, Huiqing Wen, Ang Li, Yung C. Liang, Cezhou Zhao

IEEE Access, 2019

Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator.

Bangbo Sun, Huiqing Wen, Qingling Bu, Wen Liu

Proceedings of the International Conference on IC Design and Technology, 2019

The Impact of AlGaN Barrier on Transient VTH Shifts and VTH Hysteresis in Depletion and Enhancement mode AlGaN/GaN MIS-HEMTs.

Bohan Lu, Miao Cui, Wen Liu

Proceedings of the International Conference on IC Design and Technology, 2019

A full GaN-Integrated Sawtooth Generator based on Enhancement-mode AlGaN/GaN MIS-HEMT for GaN Power Converters.

Xueteng Li, Miao Cui, Wen Liu

Proceedings of the International Conference on IC Design and Technology, 2019

Design and Evaluation of GaN-based Over-Temperature Protection Circuit.

Lei Kang, Huiqing Wen, Qinglei Bu, Wen Liu

Proceedings of the International Conference on IC Design and Technology, 2019

The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters.

Miao Cui, Yutao Cai, Qinglei Bu, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker, Cezhou Zhao

Proceedings of the International Conference on IC Design and Technology, 2019

Design of GaN-based Voltage Reference Circuit for a Wide-Temperature-Range Operation.

Xudong Chen, Huiqing Wen, Qinglei Bu, Wen Liu

Proceedings of the International Conference on IC Design and Technology, 2019

Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices.

Yutao Cai, Yang Wang, Miao Cui, Wen Liu, Huiqing Wen, Cezhou Zhao, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker

Proceedings of the International Conference on IC Design and Technology, 2019

Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode With and Without Recessed Anode.

Qinglei Bu, Yutao Cai, Miao Cui, Huiqing Wen, Wen Liu

Proceedings of the International Conference on IC Design and Technology, 2019