Zhaoyu Ai

According to our database, Zhaoyu Ai authored at least 2 papers between 2023 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

A new concept high-k GaN FinFET with integrated SBD breaking the unipolar limit of GaN and realizing excellent reverse recovery performance.

Moufu Kong, Qizhi Feng, Hongfei Deng, Zhaoyu Ai, Mingliang Yang, Ning Yu, Bingke Zhang, Bo Yi, Hongqiang Yang

Microelectron. J., 2025

2023

A Novel Semi-superjunction SiC Trench MOSFET with Ultra-low Specific On-resistance.

Zhaoyu Ai, Haiyun Liu, Xinyang Chen, Jing Feng, Yuxi Zhou, Moufu Kong

Proceedings of the 15th IEEE International Conference on ASIC, 2023