Zheyang Zheng

According to our database, Zheyang Zheng authored at least 7 papers between 2019 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Characteristics and Evaluation Approaches of Human-Body-Model Electrostatic Discharge Across Schottky p-GaN Gate HEMTs.

Jiahui Sun, Zheyang Zheng, Li Zhang, Kevin J. Chen

IEEE Trans. Ind. Electron., March, 2024

2022

Monolithic Integration of Gate Driver and Protection Modules With P-GaN Gate Power HEMTs.

Han Xu, Gaofei Tang, Jin Wei, Zheyang Zheng, Kevin J. Chen

IEEE Trans. Ind. Electron., 2022

Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs.

Jiahui Sun, Kailun Zhong, Zheyang Zheng, Gang Lyu, Kevin J. Chen

IEEE Trans. Ind. Electron., 2022

2021

Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests.

Jiahui Sun, Jin Wei, Zheyang Zheng, Kevin J. Chen

IEEE Trans. Ind. Electron., 2021

E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability.

Mengyuan Hua, Junting Chen, Chengcai Wang, Lingling Li, Ling Liu, Zheyang Zheng, Kevin J. Chen

Proceedings of the 14th IEEE International Conference on ASIC, 2021

2020

Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices.

Yuru Wang, Gang Lyu, Jin Wei, Zheyang Zheng, Jiabei He, Jiacheng Lei, Kevin J. Chen

IEEE Trans. Ind. Electron., 2020

2019

Reverse-Bias Stability and Reliability of Enhancement-mode GaN-based MIS-FET.

Mengyuan Hua, Song Yang, Jin Wei, Zheyang Zheng, Jiabei He, Kevin J. Chen

Proceedings of the 13th IEEE International Conference on ASIC, 2019