Annunziata Sanseverino

According to our database1, Annunziata Sanseverino authored at least 18 papers between 2003 and 2018.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Bibliography

2018
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests.
Microelectron. Reliab., 2018

Measure of high frequency input impedance to study the instability of power devices in short circuit.
Microelectron. Reliab., 2018

Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation.
Microelectron. Reliab., 2018

2017
Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit.
Microelectron. Reliab., 2017

2015
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT.
Microelectron. Reliab., 2015

2014
Turn-off instabilities in large area IGBTs.
Microelectron. Reliab., 2014

Thermal damage in SiC Schottky diodes induced by SE heavy ions.
Microelectron. Reliab., 2014

2013
Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit.
Microelectron. Reliab., 2013

2012
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure.
Microelectron. Reliab., 2012

Reliability oriented design of power supplies for high energy physics applications.
Microelectron. Reliab., 2012

2011
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs.
Microelectron. Reliab., 2011

2010
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET.
Microelectron. Reliab., 2010

2009
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions.
Microelectron. Reliab., 2009

2008
Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure.
Microelectron. Reliab., 2008

2006
Experimental study of power MOSFET's gate damage in radiation environment.
Microelectron. Reliab., 2006

2005
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET.
Microelectron. Reliab., 2005

2004
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure.
Microelectron. Reliab., 2004

2003
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment.
Microelectron. Reliab., 2003


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