S. Mattiazzo

According to our database, S. Mattiazzo authored at least 8 papers between 2011 and 2019.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2019

Depleted MAPS on a 110 nm CMOS CIS Technology.

Raffaele Aaron Giampaolo, Andrea Di Salvo, Lucio Pancheri, Tommaso Croci, Jonhatan Olave, Angelo Rivetti, Manuel Da Rocha Rolo, Serena Mattiazzo, Piero Giubilato

Proceedings of the 26th IEEE International Conference on Electronics, Circuits and Systems, 2019

2018

Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation.

Carmine Abbate, Giovanni Busatto, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi

Microelectron. Reliab., 2018

1GigaRad TID impact on 28 nm HEP analog circuits.

Federica Resta, Simone Gerardin, S. Mattiazzo, Alessandro Paccagnella, Marcello De Matteis, Christian C. Enz, Andrea Baschirotto

Integr., 2018

2017

Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs.

C.-M. Zhang, Farzan Jazaeri, Alessandro Pezzotta, Claudio Bruschini, Giulio Borghello, S. Mattiazzo, Andrea Baschirotto, Christian C. Enz

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC.

Alessandro Pezzotta, C.-M. Zhang, Farzan Jazaeri, Claudio Bruschini, Giulio Borghello, Federico Faccio, S. Mattiazzo, Andrea Baschirotto, Christian C. Enz

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT.

Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi

Microelectron. Reliab., 2015

CHIPIX65: Developments on a new generation pixel readout ASIC in CMOS 65 nm for HEP experiments.

N. Demaria, G. Dellacasa, G. Mazza, Angelo Rivetti, Manuel D. Da Rocha Rolo, E. Monteil, L. Pacher, Fabio Ciciriello, Francesco Corsi, Cristoforo Marzocca, G. De Roberts, F. Loddo, C. Tamma, Marta Bagatin, D. Bisello, Simone Gerardin, S. Mattiazzo, L. Ding, Piero Giubilato, Alessandro Paccagnella, Francesco De Canio, Luigi Gaioni, Massimo Manghisoni, Valerio Re, Gianluca Traversi, Elisa Riceputi, Lodovico Ratti, Carla Vacchi, Roberto Beccherle, Guido Magazzù, M. Minuti, Fabio Morsani, Fabrizio Palla, Valentino Liberali, Seyedruhollah Shojaii, Alberto Stabile, Gian Mario Bilei, Mauro Menichelli, Elia Conti, Sara Marconi, D. Passen, Pisana Placidi

Proceedings of the 6th International Workshop on Advances in Sensors and Interfaces, 2015

2011

A new test methodology for an exhaustive study of single-event-effects on power MOSFETs.

Giovanni Busatto, D. Bisello, Giuseppe Currò, Piero Giubilato, Francesco Iannuzzo, S. Mattiazzo, D. Pantano, Annunziata Sanseverino, L. Silvestrin, M. Tessaro, Francesco Velardi, Jeffery Wyss

Microelectron. Reliab., 2011