Francesco Iannuzzo
Orcid: 0000-0003-3949-2172
According to our database1,
Francesco Iannuzzo
authored at least 72 papers
between 2001 and 2023.
Collaborative distances:
Collaborative distances:
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Bibliography
2023
Multidimensional Mission-Profile-Based Lifetime Estimation Approach for IGBT Modules in MMC-HVdc Application Considering Bidirectional Power Transfer.
IEEE Trans. Ind. Electron., July, 2023
Proceedings of the IEEE Industry Applications Society Annual Meeting, 2023
2022
Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules.
IEEE Access, 2022
2021
IEEE Access, 2021
2020
Ensuring a Reliable Operation of Two-Level IGBT-Based Power Converters: A Review of Monitoring and Fault-Tolerant Approaches.
IEEE Access, 2020
2019
IEEE Trans. Ind. Electron., 2019
2018
Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules.
IEEE Trans. Ind. Electron., 2018
Effect of short-circuit stress on the degradation of the SiO<sub>2</sub> dielectric in SiC power MOSFETs.
Microelectron. Reliab., 2018
On-line solder layer degradation measurement for SiC-MOSFET modules under accelerated power cycling condition.
Microelectron. Reliab., 2018
Microelectron. Reliab., 2018
Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules.
Microelectron. Reliab., 2018
Investigation of acoustic emission as a non-invasive method for detection of power semiconductor aging.
Microelectron. Reliab., 2018
Power cycling test of transfer molded IGBT modules by advanced power cycler under different junction temperature swings.
Microelectron. Reliab., 2018
Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter.
Microelectron. Reliab., 2018
Failure mechanism analysis of fuses subjected to manufacturing and operational thermal stresses.
Microelectron. Reliab., 2018
Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactions.
Microelectron. Reliab., 2018
2017
Microelectron. Reliab., 2017
Microelectron. Reliab., 2017
Uneven temperature effect evaluation in high-power IGBT inverter legs and relative test platform design.
Microelectron. Reliab., 2017
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules.
Microelectron. Reliab., 2017
Advanced power cycler with intelligent monitoring strategy of IGBT module under test.
Microelectron. Reliab., 2017
Microelectron. Reliab., 2017
Reliability-oriented environmental thermal stress analysis of fuses in power electronics.
Microelectron. Reliab., 2017
Proceedings of the IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, Beijing, China, October 29, 2017
Proceedings of the IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, Beijing, China, October 29, 2017
Separation test method for investigation of current density effects on bond wires of SiC power MOSFET modules.
Proceedings of the IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, Beijing, China, October 29, 2017
Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions.
Proceedings of the IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, Beijing, China, October 29, 2017
2016
Comparison of thermal runaway limits under different test conditions based on a 4.5 kV IGBT.
Microelectron. Reliab., 2016
Modern IGBT gate driving methods for enhancing reliability of high-power converters - An overview.
Microelectron. Reliab., 2016
Power cycling test and failure analysis of molded Intelligent Power IGBT Module under different temperature swing durations.
Microelectron. Reliab., 2016
Microelectron. Reliab., 2016
2015
Robustness of MW-Level IGBT modules against gate oscillations under short circuit events.
Microelectron. Reliab., 2015
Junction temperature estimation method for a 600 V, 30A IGBT module during converter operation.
Microelectron. Reliab., 2015
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT.
Microelectron. Reliab., 2015
2014
Microelectron. Reliab., 2014
Investigation on the short-circuit behavior of an aged IGBT module through a 6 kA/1.1 kV non-destructive testing equipment.
Proceedings of the IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society, Dallas, TX, USA, October 29, 2014
2013
Microelectron. Reliab., 2013
Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit.
Microelectron. Reliab., 2013
Catastrophic failure and fault-tolerant design of IGBT power electronic converters - an overview.
Proceedings of the IECON 2013, 2013
2012
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure.
Microelectron. Reliab., 2012
Microelectron. Reliab., 2012
Microelectron. Reliab., 2012
2011
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs.
Microelectron. Reliab., 2011
Microelectron. Reliab., 2011
2010
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET.
Microelectron. Reliab., 2010
Microelectron. Reliab., 2010
2009
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions.
Microelectron. Reliab., 2009
Microelectron. Reliab., 2009
2008
Race-Control Algorithm for the Full-Bridge PRCP Converter Using Cost-Effective FPGAs.
IEEE Trans. Ind. Electron., 2008
High performance, FPGA-based test apparatus for unclamped inductive switching of IGBTs.
Microelectron. Reliab., 2008
Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure.
Microelectron. Reliab., 2008
2007
Microelectron. Reliab., 2007
2006
Microelectron. Reliab., 2006
Microelectron. Reliab., 2006
Microelectron. Reliab., 2006
2005
Non-destructive Testing Technique for MOSFET's Characterisation during Soft-Switching ZVS Operations.
Microelectron. Reliab., 2005
Microelectron. Reliab., 2005
2004
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure.
Microelectron. Reliab., 2004
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications.
Microelectron. Reliab., 2004
2003
Microelectron. Reliab., 2003
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact<sup>, </sup>.
Microelectron. Reliab., 2003
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement.
Microelectron. Reliab., 2003
Microelectron. Reliab., 2003
2002
Microelectron. Reliab., 2002
Microelectron. Reliab., 2002
2001
Microelectron. Reliab., 2001