Giuseppe Currò

According to our database, Giuseppe Currò authored at least 15 papers between 2002 and 2011.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2011

A new test methodology for an exhaustive study of single-event-effects on power MOSFETs.

Giovanni Busatto, D. Bisello, Giuseppe Currò, Piero Giubilato, Francesco Iannuzzo, S. Mattiazzo, D. Pantano, Annunziata Sanseverino, L. Silvestrin, M. Tessaro, Francesco Velardi, Jeffery Wyss

Microelectron. Reliab., 2011

2010

Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET.

Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi

Microelectron. Reliab., 2010

2009

Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions.

Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi

Microelectron. Reliab., 2009

2008

Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure.

Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi

Microelectron. Reliab., 2008

2007

Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N₂O ambient of a thin SiO₂ gate.

Francesca Monforte, Marco Camalleri, Denise Calì, Giuseppe Currò, Enza Fazio, Fortunato Neri

Microelectron. Reliab., 2007

Interface states and traps in thin N₂O-grown oxynitride/oxide di-layer for PowerMOSFET devices.

Giuseppe Currò, Marco Camalleri, Denise Calì, Francesca Monforte, Fortunato Neri

Microelectron. Reliab., 2007

Carrier trapping in thin N₂O-grown oxynitride/oxide di-layer for PowerMOSFET devices.

Giuseppe Currò, Marco Camalleri, Denise Calì, Francesca Monforte, Fortunato Neri

Microelectron. Reliab., 2007

Total ionizing dose reliability of thin SiO₂ in PowerMOSFET devices.

Alessandra Cascio, Giuseppe Currò, A. Cavagnoli

Microelectron. Reliab., 2007

Evaluation of the generation mechanisms at surface and in the bulk of the silicon by current transient technique.

Giacomo Barletta, Giuseppe Currò

Microelectron. Reliab., 2007

2006

Experimental study of power MOSFET's gate damage in radiation environment.

Giovanni Busatto, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi, Giuseppe Currò

Microelectron. Reliab., 2006

2005

Experimental and Numerical investigation about SEB/SEGR of Power MOSFET.

Giovanni Busatto, Alberto Porzio, Francesco Velardi, Francesco Iannuzzo, Annunziata Sanseverino, Giuseppe Currò

Microelectron. Reliab., 2005

Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS.

Giacomo Barletta, Giuseppe Currò

Microelectron. Reliab., 2005

2004

The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure.

Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, Annunziata Sanseverino, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina

Microelectron. Reliab., 2004

2003

Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment.

Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, Annunziata Sanseverino, A. Candelori, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina

Microelectron. Reliab., 2003

2002

Growth process and chemical characterization of an ultrathin phosphate film grafted onto Al-alloy metallization surfaces relevant to microelectronic devices reliability.

Giuseppe Currò, R. Greco, Antonino Scandurra

Microelectron. Reliab., 2002