B. L. Yang

According to our database, B. L. Yang authored at least 4 papers between 2012 and 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2014

On the current conduction mechanisms of CeO₂/La₂O₃ stacked gate dielectric.

Xuan Feng, Hei Wong, B. L. Yang, Shurong Dong, Hiroshi Iwai, Kuniyuki Kakushima

Microelectron. Reliab., 2014

Temperature dependences of threshold voltage and drain-induced barrier lowering in 60 nm gate length MOS transistors.

Zehua Chen, Hei Wong, Yan Han, Shurong Dong, B. L. Yang

Microelectron. Reliab., 2014

2013

Thermal and voltage instabilities of hafnium oxide films prepared by sputtering technique.

Hei Wong, B. L. Yang, Shurong Dong

Microelectron. Reliab., 2013

2012

Improving the electrical characteristics of MOS transistors with CeO₂/La₂O₃ stacked gate dielectric.

B. L. Yang, Hei Wong, Kuniyuki Kakushima, Hiroshi Iwai

Microelectron. Reliab., 2012