Kuniyuki Kakushima

According to our database1, Kuniyuki Kakushima authored at least 37 papers between 2005 and 2019.

Collaborative distances:



In proceedings 
PhD thesis 


On csauthors.net:



Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors.
Microelectron. Reliab., 2018

Improvement of SiO<sub>2</sub>/4H-SiC Interface properties by post-metallization annealing.
Microelectron. Reliab., 2018

New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment.
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018

Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately.
Proceedings of the 48th European Solid-State Device Research Conference, 2018

Durability evaluation of hexagonal WO<sub>3</sub> electrode for lithium ion secondary batteries.
Microelectron. Reliab., 2017

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat).
Proceedings of the 12th IEEE International Conference on ASIC, 2017

Resistive switching properties of a thin SiO<sub>2</sub> layer with CeO<sub>x</sub> buffer layer on n<sup>+</sup> and p<sup>+</sup> Si bottom electrodes.
Microelectron. Reliab., 2016

Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current.
Microelectron. Reliab., 2016

La<sub>2</sub>O<sub>3</sub> gate dielectrics for AlGaN/GaN HEMT.
Microelectron. Reliab., 2016

Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity.
Microelectron. Reliab., 2015

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes.
Microelectron. Reliab., 2015

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability.
Microelectron. Reliab., 2014

On the current conduction mechanisms of CeO<sub>2</sub>/La<sub>2</sub>O<sub>3</sub> stacked gate dielectric.
Microelectron. Reliab., 2014

Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement.
Microelectron. Reliab., 2014

Determination of energy and spatial distribution of oxide border traps in In<sub>0.53</sub>Ga<sub>0.47</sub>As MOS capacitors from capacitance-voltage characteristics measured at various temperatures.
Microelectron. Reliab., 2014

Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT.
Proceedings of the European Solid-State Device Research Conference, 2013

Improving the electrical characteristics of MOS transistors with CeO<sub>2</sub>/La<sub>2</sub>O<sub>3</sub> stacked gate dielectric.
Microelectron. Reliab., 2012

Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown.
Microelectron. Reliab., 2012

Oxide and interface trap densities estimation in ultrathin W/La<sub>2</sub>O<sub>3</sub>/Si MOS capacitors.
Microelectron. Reliab., 2012

Resistive switching behavior of a CeO<sub>2</sub> based ReRAM cell incorporated with Si buffer layer.
Microelectron. Reliab., 2012

(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012

Effects of La<sub>2</sub>O<sub>3</sub> incorporation in HfO<sub>2</sub> gated nMOSFETs on low-frequency noise.
Microelectron. Reliab., 2011

Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs.
Microelectron. Reliab., 2011

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors.
Microelectron. Reliab., 2011

Si nanowire FET and its modeling.
Sci. China Inf. Sci., 2011

Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness.
Microelectron. Reliab., 2010

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La<sub>2</sub>O<sub>3</sub> gate dielectrics.
Microelectron. Reliab., 2010

SrO capping effect for La<sub>2</sub>O<sub>3</sub>/Ce-silicate gate dielectrics.
Microelectron. Reliab., 2010

Equivalent Noise Temperature Representation for Scaled MOSFETs.
IEICE Trans. Electron., 2010

Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs.
IEICE Trans. Electron., 2010

Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors.
Microelectron. Reliab., 2009

Electrical characteristics of MOSFETs with La<sub>2</sub>O<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub> gate stack.
Microelectron. Reliab., 2008

Parasitic Effects in Multi-Gate MOSFETs.
IEICE Trans. Electron., 2007

Carrier separation and Vth measurements of W-La<sub>2</sub>O<sub>3</sub> gated MOSFET structures after electrical stress.
IEICE Electron. Express, 2007

Effective mobility and interface-state density of La<sub>2</sub>O<sub>3</sub> nMISFETs after post deposition annealing.
IEICE Electron. Express, 2006

Silicon periodic nano-structures obtained by laser exposure of nano-wires.
Microelectron. J., 2005