Hiroshi Iwai

According to our database1, Hiroshi Iwai authored at least 59 papers between 1987 and 2019.

Collaborative distances:


IEEE Fellow

IEEE Fellow 1997, "For contributions to ultra-small geometry CMOS BiCMOS devices.".



In proceedings 
PhD thesis 


On csauthors.net:



Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors.
Microelectron. Reliab., 2018

Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing.
Microelectron. Reliab., 2018

New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment.
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018

Durability evaluation of hexagonal WO3 electrode for lithium ion secondary batteries.
Microelectron. Reliab., 2017

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat).
Proceedings of the 12th IEEE International Conference on ASIC, 2017

Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes.
Microelectron. Reliab., 2016

Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current.
Microelectron. Reliab., 2016

La2O3 gate dielectrics for AlGaN/GaN HEMT.
Microelectron. Reliab., 2016

Editor's note.
SCIENCE CHINA Information Sciences, 2016

End of the downsizing and world after that.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity.
Microelectron. Reliab., 2015

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes.
Microelectron. Reliab., 2015

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability.
Microelectron. Reliab., 2014

On the current conduction mechanisms of CeO2/La2O3 stacked gate dielectric.
Microelectron. Reliab., 2014

Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement.
Microelectron. Reliab., 2014

Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures.
Microelectron. Reliab., 2014

A Spatial Fading Emulator for Evaluation of MIMO Antennas in a Cluster Environment.
IEICE Transactions, 2014

Formation of high resistivity phases of nickel silicide at small area.
Microelectron. Reliab., 2013

Improvement on sheet resistance uniformity of nickel silicide by optimization of silicidation conditions.
Microelectron. Reliab., 2013

Experiment on battery-less sensor activation via multi-point wireless energy transmission.
Proceedings of the 24th IEEE Annual International Symposium on Personal, 2013

Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs.
Proceedings of the European Solid-State Device Research Conference, 2013

Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT.
Proceedings of the European Solid-State Device Research Conference, 2013

Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric.
Microelectron. Reliab., 2012

Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors.
Microelectron. Reliab., 2012

Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown.
Microelectron. Reliab., 2012

Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors.
Microelectron. Reliab., 2012

Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer.
Microelectron. Reliab., 2012

Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012

(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012

Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise.
Microelectron. Reliab., 2011

Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs.
Microelectron. Reliab., 2011

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors.
Microelectron. Reliab., 2011

Si nanowire FET and its modeling.
SCIENCE CHINA Information Sciences, 2011

Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness.
Microelectron. Reliab., 2010

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics.
Microelectron. Reliab., 2010

SrO capping effect for La2O3/Ce-silicate gate dielectrics.
Microelectron. Reliab., 2010

Performance Analysis of MIMO Schemes in Residential Home Environment via Wideband MIMO Propagation Measurement.
IEICE Transactions, 2010

Equivalent Noise Temperature Representation for Scaled MOSFETs.
IEICE Transactions, 2010

Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs.
IEICE Transactions, 2010

Performance Evaluation of Spatial Correlation Characteristics for Handset Antennas Using Spatial Fading Emulator Based on Clarke's Model.
IEICE Transactions, 2010

Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors.
Microelectron. Reliab., 2009

Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack.
Microelectron. Reliab., 2008

Parasitic Effects in Multi-Gate MOSFETs.
IEICE Transactions, 2007

3-D Angular Spectrum Measurements at 5 GHz in a Residential Two-Story House.
IEICE Transactions, 2007

Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress.
IEICE Electronic Express, 2007

Effects of Received Power Imbalance on the Channel Capacity of a Handset MIMO.
Proceedings of the IEEE 18th International Symposium on Personal, 2007

Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing.
IEICE Electronic Express, 2006

Performance Analysis of MIMO-OFDM Systems using Indoor Wideband MIMO Channel Measurement Data.
Proceedings of the 63rd IEEE Vehicular Technology Conference, 2006

Degradation of high-K LA2O3 gate dielectrics using progressive electrical stress.
Microelectron. Reliab., 2005

Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation.
Microelectron. J., 2005

Measurements on Area Coverage of 5GHZ Band MIMO-OFDM System in Residential Home Environment.
Proceedings of the IEEE 16th International Symposium on Personal, 2005

Foundries, EDA vendors, and designers: who shoulders the blame when a design doesn't work in the nano-scale and wireless era?
Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005

CMOS Scaling for sub-90 nm to sub-10 nm.
Proceedings of the 17th International Conference on VLSI Design (VLSI Design 2004), 2004

Trend of CMOS downsizing and its reliability.
Microelectron. Reliab., 2002

Silicon integrated circuit technology from past to future.
Microelectron. Reliab., 2002


A manufacturing-oriented environment for synthesis of fabrication processes.
Proceedings of the 1989 IEEE International Conference on Computer-Aided Design, 1989

Analysis of Velocity Saturation and Other Effects on Short-Channel MOS Transistor Capacitances.
IEEE Trans. on CAD of Integrated Circuits and Systems, 1987