Bernard S. Meyerson

According to our database1, Bernard S. Meyerson authored at least 10 papers between 1992 and 2012.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 2001, "For contributions to ultra high vacuum chemical vapor deposition and its application to low temperature epitaxy of SiGe.".

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2012
Keynote speaker: Driving innovation in the "post-silicon" world.
Proceedings of the IEEE 25th International SOC Conference, 2012

2006
Collaborative innovation; a new lever in information technology development.
Proceedings of the 2006 IEEE Hot Chips 18 Symposium (HCS), 2006

2005
Special Issue on Silicon Germanium - Advanced Technology, Modeling, and Design.
Proc. IEEE, 2005

2003
Message from the Vice President for Technology and Chief Technologist, IBM Technology Group.
IBM J. Res. Dev., 2003

Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies.
IBM J. Res. Dev., 2003

Foundation of rf CMOS and SiGe BiCMOS technologies.
IBM J. Res. Dev., 2003

2001
Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs.
Proceedings of the IEEE 2001 Custom Integrated Circuits Conference, 2001

2000
Siliconsgermanium-based mixed-signal technology for optimization of wired and wireless telecommunications.
IBM J. Res. Dev., 2000

Low-temperature Si and Si: Ge epitaxy by ultrahigh vacuum/chemical vapor deposition: Process fundamentals.
IBM J. Res. Dev., 2000

1992
UHV/CVD growth of Si and Si: Ge alloys: chemistry, physics, and device applications.
Proc. IEEE, 1992


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